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22 August 2017 Regrowth-free single-mode semiconductor laser suitable for monolithic integration based on pits mirror
Mohamad Dernaika, Niall P. Kelly, Ludovic Caro, Kevin Shortiss, Frank H. Peters
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Optical Engineering, Vol. 56, Issue 8, 086107 (August 2017). https://doi.org/10.1117/1.OE.56.8.086107
Abstract
A regrowth-free single-mode laser that is made using standard UV photolithography is reported. The laser achieves a single-mode side-mode suppression ratio of 37 dB, linewidth of 450 kHz, and tunes across 2.9 nm and is suitable for monolithic integration as a distributed feedback replacement, due to a large free spectral range of 60 nm.
CC BY: © The Authors. Published by SPIE under a Creative Commons Attribution 4.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.
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Mohamad Dernaika, Niall P. Kelly, Ludovic Caro, Kevin Shortiss, and Frank H. Peters "Regrowth-free single-mode semiconductor laser suitable for monolithic integration based on pits mirror," Optical Engineering 56(8), 086107 (22 August 2017). https://doi.org/10.1117/1.OE.56.8.086107
Received: 8 May 2017; Accepted: 2 August 2017; Published: 22 August 2017
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Cited by 8 scholarly publications.
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KEYWORDS
Mirrors
Semiconductor lasers
Etching
Optical lithography
Electron beam lithography
Optical engineering
Reflectors
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