5 January 2017 Uncooled middle wavelength infrared photoconductors based on (111) and (100) oriented HgCdTe
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Abstract
We present progress in metal organic chemical vapor deposition (MOCVD) growth of (100) HgCdTe epilayers achieved recently at the Institute of Applied Physics, Military University of Technology and Vigo System S.A. It is shown that MOCVD technology is an excellent tool for the fabrication of different HgCdTe detector structures with a wide range of composition, donor/acceptor doping, and without post grown ex-situ annealing. Surface morphology, residual background concentration, and acceptor doping efficiency are compared in (111) and (100) oriented HgCdTe epilayers. At elevated temperatures, the carrier lifetime in measured p-type photoresistors is determined by Auger 7 process with about one order of magnitude difference between theoretical and experimental values. Particular progress has been achieved in the growth of (100) HgCdTe epilayers for medium wavelength infrared photoconductors operated in high-operating temperature conditions.
© 2017 Society of Photo-Optical Instrumentation Engineers (SPIE)
Pawel Madejczyk, Pawel Madejczyk, Artur Kębłowski, Artur Kębłowski, Waldemar Gawron, Waldemar Gawron, Piotr Martyniuk, Piotr Martyniuk, Małgorzata Kopytko, Małgorzata Kopytko, Dawid Stępień, Dawid Stępień, Jaroslaw Rutkowski, Jaroslaw Rutkowski, Józef Piotrowski, Józef Piotrowski, Adam Piotrowski, Adam Piotrowski, Antoni Rogalski, Antoni Rogalski, } "Uncooled middle wavelength infrared photoconductors based on (111) and (100) oriented HgCdTe," Optical Engineering 56(9), 091602 (5 January 2017). https://doi.org/10.1117/1.OE.56.9.091602 . Submission: Received: 5 July 2016; Accepted: 29 November 2016
Received: 5 July 2016; Accepted: 29 November 2016; Published: 5 January 2017
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