14 February 2017 Effect of iodine doping in the deposition solution and iodine vapor pressure in the sensitization treatment on the properties of PbSe films
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Abstract
Effect of iodine-doping in the deposition solution and iodine vapor pressure during the sensitization process on the morphological, microstructural, electrical, and optical properties of PbSe films was studied. Undoped and iodine-doped PbSe films of polycrystalline particles were coated on thermally oxidized silicon substrates by chemical bath deposition. The PbSe films were oxidized at 380°C for 30 min and then iodinated at different iodine vapor pressures at 380°C for 5 min. When the iodine vapor pressure was below 20 Pa, PbSeO 3 was the main phase formed on the surface of PbSe microcrystals for both undoped and iodine-doped films. As the iodine vapor pressure was increased above 20 Pa, Pb 3 I 2 O 2 and PbI 2 phases were formed in both types of films and PbSeO 3 disappeared in the undoped film. Only the iodine-doped films showed photo response. The sheet resistance and IR signal-to-noise ratio had maximum values at the iodine vapor pressure of 17.5 Pa in the iodine-doped film. The x-ray diffraction spectra, scanning electron microscopy morphologies, and EDS analyses of the sensitized PbSe films show that the main role of iodine in the sensitization is helping solid-state sintering of PbSe microcrystals which may lead to redistribution of oxygen atoms in the effective atomic sites.
© 2017 Society of Photo-Optical Instrumentation Engineers (SPIE)
Youngjoon Suh, Youngjoon Suh, Sang-Hee Suh, Sang-Hee Suh, } "Effect of iodine doping in the deposition solution and iodine vapor pressure in the sensitization treatment on the properties of PbSe films," Optical Engineering 56(9), 091607 (14 February 2017). https://doi.org/10.1117/1.OE.56.9.091607 . Submission: Received: 20 October 2016; Accepted: 26 January 2017
Received: 20 October 2016; Accepted: 26 January 2017; Published: 14 February 2017
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