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8 September 2017 On response time of semiconductor photodiodes
Alexander O. Goushcha, Bernd Tabbert
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Optical Engineering, Vol. 56, Issue 9, 097101 (September 2017). https://doi.org/10.1117/1.OE.56.9.097101
Abstract
The effect of displacement currents due to dielectric relaxation of majority carriers in the charge-neutral region of a semiconductor photodiode is discussed. The dielectric relaxation is often neglected when treating the response time of photodiodes. We show that this component may dominate the slow response of not fully depleted photodiodes and has to be taken into account for correct analysis of silicon photodiode response to a brief laser pulse. A phenomenological expression for the photodiode response time that accounts for the displacement current effects is proposed and used to compare with the experimental results.
CC BY: © The Authors. Published by SPIE under a Creative Commons Attribution 4.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.
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Alexander O. Goushcha and Bernd Tabbert "On response time of semiconductor photodiodes," Optical Engineering 56(9), 097101 (8 September 2017). https://doi.org/10.1117/1.OE.56.9.097101
Received: 2 May 2017; Accepted: 10 August 2017; Published: 8 September 2017
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Cited by 35 scholarly publications.
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KEYWORDS
Photodiodes
Semiconductors
Dielectric relaxation
Silicon
Diffusion
Absorption
Electrons
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