26 October 2017 Broadly tunable terahertz difference-frequency generation in quantum cascade lasers on silicon
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Abstract
We report broadly tunable terahertz (THz) sources based on intracavity Cherenkov difference-frequency generation in quantum cascade lasers transfer-printed on high-resistivity silicon substrates. Spectral tuning from 1.3 to 4.3 THz was obtained from a 2-mm long laser chip using a modified Littrow external cavity setup. The THz power output and the midinfrared-to-THz conversion efficiency of the devices transferred on silicon are dramatically enhanced, compared with the devices on a native semi-insulating InP substrate. Enhancement is particularly significant at higher THz frequencies, where the tail of the Reststrahlen band results in a strong absorption of THz light in the InP substrate.
© 2017 Society of Photo-Optical Instrumentation Engineers (SPIE)
Seungyong Jung, Jae Hyun Kim, Yifan Jiang, Karun Vijayraghavan, Mikhail A. Belkin, "Broadly tunable terahertz difference-frequency generation in quantum cascade lasers on silicon," Optical Engineering 57(1), 011020 (26 October 2017). https://doi.org/10.1117/1.OE.57.1.011020 . Submission: Received: 20 June 2017; Accepted: 28 September 2017
Received: 20 June 2017; Accepted: 28 September 2017; Published: 26 October 2017
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