31 January 2018 Structural, electrical, and photoelectric properties of p-NiO/n-CdTe heterojunctions
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p-NiO/n-CdTe-photosensitive heterojunctions were prepared by the deposition of nickel oxide thin films onto n-type single-crystal CdTe substrates by DC reactive magnetron sputtering. The analysis of capacitance-voltage (C−V) characteristics, measured at different frequencies of the small amplitude AC signal and corrected by the effect of the series resistance, provided evidence of the presence of electrically charged interface states, which significantly affect the measured capacitance. The dominant current transport mechanisms in the heterojunctions were determined at forward and reverse biases. Using “light” I−V characteristics, we determined the open-circuit voltage Voc=0.42  V, the short-circuit current Isc=57.5  μA/cm2, and the fill factor FF=0.24 under white light illumination with the intensity of 80  mW/cm2.
© 2018 Society of Photo-Optical Instrumentation Engineers (SPIE)
Hryhorii Parkhomenko, Hryhorii Parkhomenko, Mykhaylo Solovan, Mykhaylo Solovan, Viktor V. Brus, Viktor V. Brus, Eduard Maystruk, Eduard Maystruk, Pavlo D. Maryanchuk, Pavlo D. Maryanchuk, } "Structural, electrical, and photoelectric properties of p-NiO/n-CdTe heterojunctions," Optical Engineering 57(1), 017116 (31 January 2018). https://doi.org/10.1117/1.OE.57.1.017116 . Submission: Received: 10 October 2017; Accepted: 12 January 2018
Received: 10 October 2017; Accepted: 12 January 2018; Published: 31 January 2018


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