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19 September 2019 Light-assisted charge trapping phototransistor memory based on PbSe nanoparticles
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Abstract

A lead selenide (PbSe) NC-based phototransistor memory (PTM), wherein graphene oxide (GO) sheets covered by Au nanoparticles (NCs) act as double charge trapping layers, is studied under near-infrared (NIR) light. The memory window (ΔVth) can be significantly enlarged by light-assisted programming and erasing processes, wherein the photogenerated carriers in a PbSe NCs channel can be trapped and detrapped by the GO/Au NCs charge-trapping layers. The PTM achieved an enhanced ΔVth from 0.7 V in the dark to 1.8 V under the NIR light, due to the increasing number of photogenerated charges due to the NIR light. The PTM exhibited high responsivity (R), external quantum efficiency (EQE), and detectivity (D  *  ) of about 13.9  A  /  W, 2.2  ×  103  %  , and 1.5  ×  108 Jones, respectively. Due to the good photoresponsibility of the PbSe NCs, the PTM exhibited a large ΔVth under low programming/erasing voltages under the NIR light and realized multilevel memory. The results presented on photoassisted memory may pave a way to large-area, flexible, low-temperature fabrication, and photoreactive memory devices.

© 2019 Society of Photo-Optical Instrumentation Engineers (SPIE) 0091-3286/2019/$28.00 © 2019 SPIE
Yongli Che, Xiaolong Cao, Jianquan Yao, and Yating Zhang "Light-assisted charge trapping phototransistor memory based on PbSe nanoparticles," Optical Engineering 58(9), 097108 (19 September 2019). https://doi.org/10.1117/1.OE.58.9.097108
Received: 27 May 2019; Accepted: 4 September 2019; Published: 19 September 2019
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