50-keV electron multibeam mask writer for the 11-nm HP node: first results of the proof-of-concept electron multibeam mask exposure tool

Christof Klein; Hans Loeschner; Elmar Platzgummer

doi:10.1117/1.JMM.11.3.031402

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7 August 2012 50-keV electron multibeam mask writer for the 11-nm HP node: first results of the proof-of-concept electron multibeam mask exposure tool

Christof Klein, Hans Loeschner, Elmar Platzgummer

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J. of Micro/Nanolithography, MEMS, and MOEMS, 11(3), 031402 (2012). https://doi.org/10.1117/1.JMM.11.3.031402

Abstract

First results obtained with IMS Nanofabrication's 50-keV proof-of-concept electron multibeam mask exposure tool (eMET POC) are presented. The eMET POC was designed from scratch to meet the requirements of the 11-nm half-pitch node and already features the same column as future high volume manufacturing (HVM) tools. All exposures shown in this paper were the result of 262,144 beams of 20 nm beam size working in parallel demonstrating the capability of IMS's multibeam technology. An alpha tool is scheduled for 2014, followed by a beta tool in 2015 and first-generation HVM tools in 2016.

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Christof Klein, Hans Loeschner, and Elmar Platzgummer "50-keV electron multibeam mask writer for the 11-nm HP node: first results of the proof-of-concept electron multibeam mask exposure tool," Journal of Micro/Nanolithography, MEMS, and MOEMS 11(3), 031402 (7 August 2012). https://doi.org/10.1117/1.JMM.11.3.031402

Published: 7 August 2012

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