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6 February 2013 Applications of advanced metrology techniques for the characterization of extreme ultraviolet mask blank defects
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Characterization of defects and their sources is essential for developing mitigation solutions to support the production of defect-free extreme ultraviolet (EUV) mask blanks. The characterization of sub-100-nm defects pose challenges to the conventional metrology techniques, such as atomic force microscopy and scanning electron microscopy, limiting mitigation of nanoscale defects. SEMATECH’s Mask Blank Development Center houses advanced metrology capabilities that include transmission electron microscopy (TEM) and Auger electron spectroscopy (AES) to address these shortcomings. Scanning TEM was used to study the disruption of the Mo/Si multilayer of phase defects and to perform elemental analysis with energy dispersive x-ray spectroscopy that has supported projects including substrate smoothing activities, deposition simulation development, and defect printability studies. The Auger instrument was used to create elemental maps for defect identification and to characterize the ion beam deposition tool. Using advanced metrology, mitigation of small defects is being realized, yielding mask blanks with defect counts as low as eight defects at 50-nm sensitivity (Lasertec M7360 SiO2 sphere equivalent) measured over the quality area of 132×132 mm2 . The issues with the metrology of increasingly small EUV mask blank defects will be outlined, and comprehensive defect characterization results using TEM and AES will be presented.
© 2013 Society of Photo-Optical Instrumentation Engineers (SPIE) 0091-3286/2013/$25.00 © 2013 SPIE
Jenah Harris-Jones, Emilio Stinzianni, Chihcheng Lin, Vibhu Jindal, Ranganath Teki, and Hyuk Joo Kwon "Applications of advanced metrology techniques for the characterization of extreme ultraviolet mask blank defects," Journal of Micro/Nanolithography, MEMS, and MOEMS 12(1), 013007 (6 February 2013).
Published: 6 February 2013


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