Development of a low-hysteresis and high-linearity extended gate field-effect transistor-based chloride ion-sensitive microsensor

I-Yu Huang; Chia-Hsun Hsieh; Wei-Chun Chang

doi:10.1117/1.JMM.12.2.023016

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12 June 2013 Development of a low-hysteresis and high-linearity extended gate field-effect transistor-based chloride ion-sensitive microsensor

I-Yu Huang, Chia-Hsun Hsieh, Wei-Chun Chang

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J. of Micro/Nanolithography, MEMS, and MOEMS, 12(2), 023016 (2013). https://doi.org/10.1117/1.JMM.12.2.023016

Abstract

A low-hysteresis voltage and high-sensing linearity chloride ion-sensitive sensor based on an extended gate field-effect transistor (EGFET) for real-time water quality monitoring microsystem applications is presented. All of the EGFET-manufacturing processes adopted in this work are compatible with standard integrated circuits planar technology, and therefore, they are very suitable for the mass production. Two EGFET-based chloride ion-sensitive microsensors having same channel width/length ratio (1000 μm/10 μm ) but with different channel geometries (rectangular and annular types) are presented. At pCl 3 (log[Cl⁻ ]=−3 ) test point, a very small hysteresis voltage of the rectangular- and annular-channels EGFET-based Cl⁻ microsensors (5 and 7 mV, respectively) can be achieved. As the concentrations tested ranging from pCl 1 (log[Cl − ]=−1 ) to pCl 5 (log[Cl ⁻]=−5 ), a very high-sensing linearity (99.23% and 99.08%) of the two types of EGFET-based Cl ⁻ microsensors is achieved. However, the sensitivity of the rectangular-channel EGFET-based Cl − microsensor (45 mV/pCl ) is much higher than that of the annular-channel EGFET-based Cl⁻ microsensor (37 mV/pCl ). The selectivity coefficient of the investigated EGFET-chloride ion sensor under four different interfering ions (OH ⁻ , F⁻ , SO 2− 4 , and Br ⁻ ) are also measured and analyzed.

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I-Yu Huang, Chia-Hsun Hsieh, and Wei-Chun Chang "Development of a low-hysteresis and high-linearity extended gate field-effect transistor-based chloride ion-sensitive microsensor," Journal of Micro/Nanolithography, MEMS, and MOEMS 12(2), 023016 (12 June 2013). https://doi.org/10.1117/1.JMM.12.2.023016

Published: 12 June 2013

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