12 August 2013 Three-dimensional x-ray metrology for block copolymer lithography line-space patterns
Author Affiliations +
Abstract
We report on the development of a new measurement method, resonant critical-dimension small-angle x-ray scattering (res-CDSAXS), for the characterization of the buried structure of block copolymers (BCP) used in directed self assembly (DSA). We use resonant scattering at the carbon edge to enhance the contrast between the two polymer blocks and allow the determination of the three-dimensional shape of the native lamella in a line–space pattern by CDSAXS. We demonstrate the method by comparing the results from conventional CDSAXS to res-CDSAXS on a 1:1 DSA BCP sample with a nominal 50-nm pitch. The res-CDSAXS method provides substantially improved uncertainty in the fit of the line shape and allows the determination of the buried structure.
© 2013 Society of Photo-Optical Instrumentation Engineers (SPIE) 0091-3286/2013/$25.00 © 2013 SPIE
Daniel F. Sunday, Matthew R. Hammond, Chengqing Wang, Wen-li Wu, R. Joseph Kline, and Gila E. Stein "Three-dimensional x-ray metrology for block copolymer lithography line-space patterns," Journal of Micro/Nanolithography, MEMS, and MOEMS 12(3), 031103 (12 August 2013). https://doi.org/10.1117/1.JMM.12.3.031103
Published: 12 August 2013
Lens.org Logo
CITATIONS
Cited by 34 scholarly publications and 2 patents.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Scattering

Picosecond phenomena

X-rays

Lithography

Polymethylmethacrylate

Directed self assembly

Metrology

Back to Top