Thermally controlled alignment for wafer-scale lithography

Euclid E. Moon; Saurabh A. Chandorkar; S. V. Sreenivasan; R. Fabian Pease

doi:10.1117/1.JMM.12.3.031109

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28 August 2013 Thermally controlled alignment for wafer-scale lithography

Euclid E. Moon, Saurabh A. Chandorkar, S. V. Sreenivasan, R. Fabian Pease

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J. of Micro/Nanolithography, MEMS, and MOEMS, 12(3), 031109 (2013). https://doi.org/10.1117/1.JMM.12.3.031109

Abstract

A primary limitation in nanoimprint lithography is lack of alignment consistency between multiple fields. Simultaneous imprinting of several fields is highly desirable for enhanced throughput, yet placement errors in template fabrication and other factors limit field-to-field accuracy. Here, we describe a method to improve overlay simultaneously across many fields via continuous, in situ control of localized temperature distributions. In this method, interferometric moiré alignment signals from an array of microscopes are analyzed to form a map of distortion and control the distribution of heat in real time. Thermal cross-talk between fields is minimized using a microchannel wafer chuck. We demonstrate simultaneous operation of feedback loops that stabilize alignment over a 100-mm span to 0.5 nm (3σ).

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Euclid E. Moon, Saurabh A. Chandorkar, S. V. Sreenivasan, and R. Fabian Pease "Thermally controlled alignment for wafer-scale lithography," Journal of Micro/Nanolithography, MEMS, and MOEMS 12(3), 031109 (28 August 2013). https://doi.org/10.1117/1.JMM.12.3.031109

Published: 28 August 2013

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