Mask defect management in extreme-ultraviolet lithography

Nai-Ching Chen; Chia-Hao Yu; Ching-Fang Yu; Chi-Lun Lu; James Chu; Luke T. Hsu; Angus S. Chin; Anthony Yen

doi:10.1117/1.JMM.13.2.023010

16 June 2014 Mask defect management in extreme-ultraviolet lithography

Nai-Ching Chen, Chia-Hao Yu, Ching-Fang Yu, Chi-Lun Lu, James Chu, Luke T. Hsu, Angus S. Chin, Anthony Yen

Journal of Micro/Nanolithography, MEMS, and MOEMS, Vol. 13, Issue 2, 023010 (June 2014). https://doi.org/10.1117/1.JMM.13.2.023010

Abstract

We present a series of baseline techniques for inspection, cleaning, repair, and native defect mitigation of extreme ultraviolet (EUV) masks. Deep-ultraviolet inspectors are capable of inspecting patterns down to about 45 nm in pitch on wafer. Cleaning methods involving both chemical and physical forces have achieved good particle removal efficiency while minimizing absorber shrinkage and have realized 90% PRE in removing particles from the backside of an EUV mask. In addition, our compensation method for native defect repair has achieved partial success.

Citation Download Citation

Nai-Ching Chen, Chia-Hao Yu, Ching-Fang Yu, Chi-Lun Lu, James Chu, Luke T. Hsu, Angus S. Chin, and Anthony Yen "Mask defect management in extreme-ultraviolet lithography," Journal of Micro/Nanolithography, MEMS, and MOEMS 13(2), 023010 (16 June 2014). https://doi.org/10.1117/1.JMM.13.2.023010

Published: 16 June 2014

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