Study on electrical parameter to nano thin-film transistor under GPa-order stress

Tieying Ma; Sen Yang; Yidong Liu; Huiquan Wang

doi:10.1117/1.JMM.14.3.035001

7 August 2015 Study on electrical parameter to nano thin-film transistor under GPa-order stress

Tieying Ma, Sen Yang, Yidong Liu, Huiquan Wang

Journal of Micro/Nanolithography, MEMS, and MOEMS, Vol. 14, Issue 3, 035001 (August 2015). https://doi.org/10.1117/1.JMM.14.3.035001

Abstract

Nano thinfilm transistor (TFT) is fabricated at the root of a beam, which becomes the maximum stress area when the beam is bent. In this process, a probe is used to bend the beam and produce GPa-order mechanical stress. The electrical characteristic of TFT under different GPa stress has been studied. Threshold voltage V_T, relative drain current change ΔI_ds/I_ds, and transconductance g_m present a nonlinear relationship with increasing GPa-order stress. Analyzed from experimental results, channel piezoresistivity effect below 1.82 GPa stress, energy valley splitting, large change of valence effective mass from 1.82 to 2.08 GPa, and interface effect above 2.08 GPa are the factors of nonlinear change of parameter with GPa-order mechanical stress.

Citation Download Citation

Tieying Ma, Sen Yang, Yidong Liu, and Huiquan Wang "Study on electrical parameter to nano thin-film transistor under GPa-order stress," Journal of Micro/Nanolithography, MEMS, and MOEMS 14(3), 035001 (7 August 2015). https://doi.org/10.1117/1.JMM.14.3.035001

Published: 7 August 2015

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