Advanced electric-field scanning probe lithography on molecular resist using active cantilever

Marcus Kaestner; Cemal Aydogan; Tzvetan Ivanov; Ahmad Ahmad; Tihomir Angelov; Alexander Reum; Valentyn Ishchuk; Yana Krivoshapkina; Manuel Hofer; Steve Lenk; Ivaylo Atanasov; Mathias Holz; Ivo W. Rangelow

doi:10.1117/1.JMM.14.3.031202

10 June 2015 Advanced electric-field scanning probe lithography on molecular resist using active cantilever

Marcus Kaestner, Cemal Aydogan, Tzvetan Ivanov, Ahmad Ahmad, Tihomir Angelov, Alexander Reum, Valentyn Ishchuk, Yana Krivoshapkina, Manuel Hofer, Steve Lenk, Ivaylo Atanasov, Mathias Holz, Ivo W. Rangelow

Author Affiliations +

Journal of Micro/Nanolithography, MEMS, and MOEMS, Vol. 14, Issue 3, 031202 (June 2015). https://doi.org/10.1117/1.JMM.14.3.031202

Abstract

The routine “on demand” fabrication of features smaller than 10 nm opens up new possibilities for the realization of many devices. Driven by the thermally actuated piezoresistive cantilever technology, we have developed a prototype of a scanning probe lithography (SPL) platform which is able to image, inspect, align, and pattern features down to the single digit nanoregime. Here, we present examples of practical applications of the previously published electric-field based current-controlled scanning probe lithography. In particular, individual patterning tests are carried out on calixarene by using our developed table–top SPL system. We have demonstrated the application of a step-and-repeat SPL method including optical as well as atomic force microscopy-based navigation and alignment. The closed-loop lithography scheme was applied to sequentially write positive and negative tone features. Due to the integrated unique combination of read–write cycling, each single feature is aligned separately with the highest precision and inspected after patterning. This routine was applied to create a pattern step by step. Finally, we have demonstrated the patterning over larger areas, over existing topography, and the practical applicability of the SPL processes for lithography down to 13-nm pitch patterns. To enhance the throughput capability variable beam diameter electric field, current-controlled SPL is briefly discussed.

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Marcus Kaestner, Cemal Aydogan, Tzvetan Ivanov, Ahmad Ahmad, Tihomir Angelov, Alexander Reum, Valentyn Ishchuk, Yana Krivoshapkina, Manuel Hofer, Steve Lenk, Ivaylo Atanasov, Mathias Holz, and Ivo W. Rangelow "Advanced electric-field scanning probe lithography on molecular resist using active cantilever," Journal of Micro/Nanolithography, MEMS, and MOEMS 14(3), 031202 (10 June 2015). https://doi.org/10.1117/1.JMM.14.3.031202

Published: 10 June 2015

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