Development of ballistic hot electron emitter and its applications to parallel processing: active-matrix massive direct-write lithography in vacuum and thin-film deposition in solutions

Nobuyoshi Koshida; Akira Kojima; Naokatsu Ikegami; Ryutaro Suda; Mamiko Yagi; Junichi Shirakashi; Hiroshi Miyaguchi; Masanori Muroyama; Shinya Yoshida; Kentaro Totsu; Masayoshi Esashi

doi:10.1117/1.JMM.14.3.031215

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11 September 2015 Development of ballistic hot electron emitter and its applications to parallel processing: active-matrix massive direct-write lithography in vacuum and thin-film deposition in solutions

Nobuyoshi Koshida, Akira Kojima, Naokatsu Ikegami, Ryutaro Suda, Mamiko Yagi, Junichi Shirakashi, Hiroshi Miyaguchi, Masanori Muroyama, Shinya Yoshida, Kentaro Totsu, Masayoshi Esashi

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J. of Micro/Nanolithography, MEMS, and MOEMS, 14(3), 031215 (2015). https://doi.org/10.1117/1.JMM.14.3.031215

Abstract

Making the best use of the characteristic features in nanocrystalline Si (nc-Si) ballistic hot electron source, an alternative lithographic technology is presented based on two approaches: physical excitation in vacuum and chemical reduction in solutions. The nc-Si cold cathode is composed of a thin metal film, an nc-Si layer, an n+-Si substrate, and an ohmic back contact. Under a biased condition, energetic electrons are uniformly and directionally emitted through the thin surface electrodes. In vacuum, this emitter is available for active-matrix drive massive parallel lithography. Arrayed 100×100 emitters (each emitting area: 10×10 μm²) are fabricated on a silicon substrate by a conventional planar process, and then every emitter is bonded with the integrated driver using through-silicon-via interconnect technology. Another application is the use of this emitter as an active electrode supplying highly reducing electrons into solutions. A very small amount of metal-salt solutions is dripped onto the nc-Si emitter surface, and the emitter is driven without using any counter electrodes. After the emitter operation, thin metal and elemental semiconductors (Si and Ge) films are uniformly deposited on the emitting surface. Spectroscopic surface and compositional analyses indicate that there are no significant contaminations in deposited thin films.

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Nobuyoshi Koshida, Akira Kojima, Naokatsu Ikegami, Ryutaro Suda, Mamiko Yagi, Junichi Shirakashi, Hiroshi Miyaguchi, Masanori Muroyama, Shinya Yoshida, Kentaro Totsu, and Masayoshi Esashi "Development of ballistic hot electron emitter and its applications to parallel processing: active-matrix massive direct-write lithography in vacuum and thin-film deposition in solutions," Journal of Micro/Nanolithography, MEMS, and MOEMS 14(3), 031215 (11 September 2015). https://doi.org/10.1117/1.JMM.14.3.031215

Published: 11 September 2015

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