15 February 2016 Errata: Viability of pattern shift for defect-free extreme ultraviolet lithography photomasks
Author Affiliations +
Abstract
This PDF file contains the errata for “JM3 Vol. 15 Issue 02 Paper JM3-2016-0202-ERR” for JM3 Vol. 15 Issue 02
John Qi, Rankin, Narita, and Kagawac: Errata: Viability of pattern shift for defect-free extreme ultraviolet lithography photomasks

This article [J. Micro/Nanolith. MEMS MOEMS 15(2), 021005 (2016)] was originally published online on 2 February 2016 with an error in the author affiliations.

The correct affiliations are shown above.

All online versions of the article were corrected on 3 February 2016. The article appears correctly in print.

© 2016 Society of Photo-Optical Instrumentation Engineers (SPIE)
Zhengqing J. Qi, Zhengqing J. Qi, Jed H. Rankin, Jed H. Rankin, Eisuke Narita, Eisuke Narita, Masayuki Kagawac, Masayuki Kagawac, } "Errata: Viability of pattern shift for defect-free extreme ultraviolet lithography photomasks," Journal of Micro/Nanolithography, MEMS, and MOEMS 15(2), 029801 (15 February 2016). https://doi.org/10.1117/1.JMM.15.2.029801 . Submission:
JOURNAL ARTICLE
1 PAGES


SHARE
RELATED CONTENT

EUVL mask performance and optimization
Proceedings of SPIE (April 16 2012)
EUVL: towards implementation in production
Proceedings of SPIE (December 10 2009)
Compensation for imaging errors in EUV lithography
Proceedings of SPIE (May 20 2004)
Static EUV micro-exposures using the ETS Set-2 optics
Proceedings of SPIE (June 16 2003)
EUV mask defect mitigation through pattern placement
Proceedings of SPIE (September 24 2010)

Back to Top