29 September 2016 Process development and edge-placement yield modeling of alternating-material self-aligned multiple patterning
Ting Han, Hongyi Liu, Yijian Chen
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Abstract
We propose and discuss a modular technology to reduce the edge-placement-error effect by combining selective etching and alternating-material (dual-material) self-aligned multiple patterning (altSAMP) processes. A geometrical cut-process yield model considering the joint effect of overlay errors, cut-hole, and line CD variations is developed to analyze its patterning performance. In addition to the contributions from the above three process variations, the impacts of key control parameters (such as cut-hole overhang and etching selectivity) on the patterning yield are examined. It is shown that the optimized altSAMP patterning process significantly improves the patterning yield compared with conventional SAMP processes, especially when the half pitch of device patterns is driven down to 7 nm and below. Moreover, the corresponding layout decomposition and synthesis strategy are also discussed. The experimental results of altSAMP process development and material screening are reported.
© 2016 Society of Photo-Optical Instrumentation Engineers (SPIE) 1932-5150/2016/$25.00 © 2016 SPIE
Ting Han, Hongyi Liu, and Yijian Chen "Process development and edge-placement yield modeling of alternating-material self-aligned multiple patterning," Journal of Micro/Nanolithography, MEMS, and MOEMS 15(3), 031609 (29 September 2016). https://doi.org/10.1117/1.JMM.15.3.031609
Published: 29 September 2016
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Cited by 1 scholarly publication and 1 patent.
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KEYWORDS
Etching

Optical lithography

Critical dimension metrology

Phase only filters

Photomasks

Failure analysis

Yield improvement

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