Over the recent years, extreme ultraviolet (EUV) lithography has demonstrated the patterning of ever-shrinking feature sizes (enabling the N7 technology node and below), whereas the EUV mask has remained unaltered, using a 70-nm tantalum (Ta)-based absorber. This has led to experimentally observed mask three-dimensional (M3D) effects at the wafer level, which are induced by the interaction between the oblique incident EUV light and the patterned absorber with typical thickness values on the order of several wavelengths. We exploit the optical properties of the absorber material of the EUV mask as an M3D mitigation strategy. Using rigorous lithographic simulations, we screen potential single-element absorber materials for their optical properties and optimal thickness for minimum best focus variation through pitch at the wafer level. In addition, the M3D mitigation by absorber material is evaluated by process window comparison of foundry N5-specific logic clips. To validate the rigorous simulation predictions and test the processing feasibility of the alternative absorber materials, we have selected the candidate single elements nickel and cobalt for an experimental evaluation on wafer substrates. We present the film characterization as well as the first patterning tests of these single-element candidate absorber materials.

Actinic mask defect inspection is an essential process step for the implementation of extreme ultraviolet (EUV) lithography in high-volume manufacturing. The main challenges for any mask defect inspection platform are resolution, sensitivity, and throughput. The reflective-mode EUV mask scanning lensless imaging microscope (RESCAN) is being developed to provide actinic patterned mask inspection capabilities for defects and patterns with high resolution and high throughput for node 7 and beyond. Namely, the goal of the RESCAN project is to develop a tool capable of inspecting an EUV reticle in 7 h and detect mask defects down to a size of 10  nm×10  nm. The lensless imaging concept allows overcoming the resolution limitations due to the numerical aperture and lens aberrations of conventional mask imaging systems. With the increasing availability of computational power and the refinement of iterative phase reconstruction algorithms, lensless imaging became a powerful tool to synthesize the complex amplitude of the reticle image providing us also with extremely valuable information about phase and mask three-dimensional effects. Here, we present a brief description of the current prototype of the RESCAN platform and illustrate a few experimental examples of programmed defect detection.

The change from isomorphic to anamorphic optics in high numerical aperture extreme ultraviolet scanners necessitates changes to the mask data preparation flow. The required changes for each step in the mask tape out process are discussed, with a focus on optical proximity correction (OPC). When necessary, solutions to new problems are demonstrated and verified by rigorous simulation. Additions to the OPC model include accounting for anamorphic effects in the optics, mask electromagnetics, and mask manufacturing. The correction algorithm is updated to include awareness of anamorphic mask geometry for mask rule checking. OPC verification through process window conditions is enhanced to test different wafer scale mask error ranges in the horizontal and vertical directions. This work will show that existing models and methods can be updated to support anamorphic optics without major changes. Also, the larger mask size in the Y direction can result in better model accuracy, easier OPC convergence, and designs that are more tolerant to mask errors.

The exploration and optimization of image formation in partially coherent EUV projection systems with complex source shapes requires flexible, accurate, and efficient simulation models. This paper reviews advanced mask diffraction and imaging models for the highly accurate and fast simulation of EUV lithography systems, addressing important aspects of the current technical developments. The simulation of light diffraction from the mask employs an extended rigorous coupled wave analysis (RCWA) approach, which is optimized for EUV applications. In order to be able to deal with current EUV simulation requirements, several additional models are included in the extended RCWA approach: a field decomposition and a field stitching technique enable the simulation of larger complex structured mask areas. An EUV multilayer defect model including a database approach makes the fast and fully rigorous defect simulation and defect repair simulation possible. A hybrid mask simulation approach combining real and ideal mask parts allows the detailed investigation of the origin of different mask 3-D effects. The image computation is done with a fully vectorial Abbe-based approach. Arbitrary illumination and polarization schemes and adapted rigorous mask simulations guarantee a high accuracy. A fully vectorial sampling-free description of the pupil with Zernikes and Jones pupils and an optimized representation of the diffraction spectrum enable the computation of high-resolution images with high accuracy and short simulation times. A new pellicle model supports the simulation of arbitrary membrane stacks, pellicle distortions, and particles/defects on top of the pellicle. Finally, an extension for highly accurate anamorphic imaging simulations is included. The application of the models is demonstrated by typical use cases.

Mask three-dimensional (3D) effects in extreme ultraviolet (EUV) lithography critically influence pattern transfer such as horizontal-vertical bias and/or CD shift. Although the mask 3D effects can be reduced using a thin film absorber, the current Ta-based absorber reaches its thin film limit at >60  nm for both binary and phase-shift type usages. To improve mask 3D effects for future EUV lithography production, the absorber material and film stack should be reconsidered. We investigated two types of thin film structure as a binary type absorber. One is a high-k type absorber. We selected nickel which has been proposed as one of the thin absorber solutions. Nickel enables less than 2% peak reflectivity at 30-nm thickness due to its high absorption. The other is a multilayer (ML)-type absorber. This type of absorber cancels out reflection from each interface, and thus low reflectivity is achieved. In the case of Ta/Si ML absorber, ≤2% reflectivity can be expected at the 39-nm film thickness.

We report a series of studies aimed at shedding more light on the development mechanism of zirconium (Zr)-based extreme-UV hybrid photoresists. In earlier works, our group demonstrated that Zr-based hybrid resists are capable of resolving 30-nm half-pitch features with a very high sensitivity in the range of 1 to 20  mJ/cm2, which renders these materials potential candidates in the area of nonchemically amplified inorganic resists. While attractive because of its high sensitivity, Zr-methacrylic acid suffers from scumming problems. In an effort to better understand what controls sensitivity and scumming phenomena, we employed a combination of analytical techniques (electrospray ionization mass spectrometry, x-ray photoelectron spectroscopy, and Fourier transform infrared spectroscopy) to study the patterning mechanism in detail, to be able to optimize the development process and develop systems with optimal features.

An extreme ultraviolet (EUV) pellicle is needed for the protection of EUV masks from defects, contaminants, and particles during the exposure process. However, the EUV pellicle can be easily deformed during the exposure process because it has an extremely thin thickness for high transmission of EUV lights. Due to the very thin thickness and the weak structure of the pellicle, a pellicle is easily deformed; a wrinkled pellicle causes an image distortion, which leads to critical dimension (CD) variation. In addition, a particle defect on an EUV pellicle can result from scanner building materials. Added materials of the particle defect on an EUV pellicle can also cause image distortion and CD variation. We investigated the impact of wrinkles and particle defects on the transmission and CD variation for the 5- and 3-nm nodes of isomorphic and anamorphic numerical aperture (NA) systems. The variation in transmission and the critical size of the particle defect with a wrinkled EUV pellicle were calculated to obtain the requirement of a CD variation of 0.2 nm for a EUV pellicle. As a result, a change in transmission of 1.9% (after two pass) resulted in a 0.2-nm variation in the CD for the anamorphic NA system (3-nm node), whereas a transmission variation of 1.3% (after two pass) caused a 0.2-nm CD variation in the isomorphic NA system (5-nm node). From these results, an allowable local tilt angle can be calculated; the allowable local tilt angle of an isomorphic NA system is 0.31 rad and that of an anamorphic NA system is 0.41 rad. When the particle defect is added on a wrinkled EUV pellicle, the critical size of the particle defect is 1.2  μm for the 5-nm node and 2.2  μm for the 3-nm node.

Block copolymers (BCPs) can phase separate to form periodic structures with small spacings, making BCPs an attractive option for furthering the ability of optical lithography. Chemoepitaxy is a method of directed self-assembly (DSA) that uses preferential pinning stripes to guide the BCP. The periodicity of the underlayers pinning stripe compared to the periodicity of the BCP is defined as the density multiplication. Molecular dynamics simulations are used to explore the effect that density multiplication and pinning stripe position (PSP) have on the free energy difference between a defective and defect-free BCP film. For all defect orders, the highest free energies were obtained when a pinning stripe was located directly under or adjacent to the terminating block. At high-density multiplications, the defects were found to approach the free energy of the same defect on an unpatterned underlayer. For all density multiplications and PSPs, the free energy of defective films is significantly higher than that of defect-free films, suggesting that the presence of defects in experiments is likely due to kinetic entrapment of defects. Free energy initially increases with increasing defect size but was found to level off and even decrease for the largest defects in this work.

Optical three-dimensional (3-D) nanostructure metrology utilizes a model-based metrology approach to determine critical dimensions (CDs) that are well below the inspection wavelength. Our project at the National Institute of Standards and Technology is evaluating how to attain key CD and shape parameters from engineered in-die capable metrology targets. More specifically, the quantities of interest are determined by varying the input parameters for a physical model until the simulations agree with the actual measurements within acceptable error bounds. As in most applications, establishing a reasonable balance between model accuracy and time efficiency is a complicated task. A well-established simplification is to model the intrinsically finite 3-D nanostructures as either periodic or infinite in one direction, reducing the computationally expensive 3-D simulations to usually less complex two-dimensional (2-D) problems. Systematic errors caused by this simplified model can directly influence the fitting of the model to the measurement data and are expected to become more apparent with decreasing lengths of the structures. We identify these effects using selected simulation results and present experimental setups, e.g., illumination numerical apertures and focal ranges, that can increase the validity of the 2-D approach.

An analytical model and numerical simulation for the performance of MEMS capacitive pressure sensors in both normal and touch modes is required for expected behavior of the sensor prior to their fabrication. Obtaining such information should be based on a complete analysis of performance parameters such as deflection of diaphragm, change of capacitance when the diaphragm deflects, and sensitivity of the sensor. In the literature, limited work has been carried out on the above-stated issue; moreover, due to approximation factors of polynomials, a tolerance error cannot be overseen. Reliable before-fabrication forecasting requires exact mathematical calculation of the parameters involved. A second-order polynomial equation is calculated mathematically for key performance parameters of both modes. This eliminates the approximation factor, and an exact result can be studied, maintaining high accuracy. The elimination of approximation factors and an approach of exact results are based on a new design parameter (δ) that we propose. The design parameter gives an initial hint to the designers on how the sensor will behave once it is fabricated. The complete work is aided by extensive mathematical detailing of all the parameters involved. Next, we verified our claims using MATLAB® simulation. Since MATLAB® effectively provides the simulation theory for the design approach, more complicated finite element method is not used.

This paper describes the incorporation of nanotextured black silicon as an optical absorbing material into silicon-based micro-optoelectromechanical systems devices to reduce stray light and increase optical contrast during imaging. Black silicon is created through a maskless dry etch process and characterized for two different etch conditions, a cold etch performed at 0°C and a cryogenic etch performed at −110°C. We measure specular reflection at visible wavelengths to be <0.001% at near-normal incidence for both processes, whereas the total diffuse scatter is <3% and 1% for the cold and cryogenic processes, respectively. These surfaces exhibit less reflectivity and lower scatter than black velvet paint used to coat optical baffles and compare favorably with other methods to produce black surfaces from nanotextured silicon or using carbon nanotubes. We illustrate the use of this material by integrating a black silicon aperture around the perimeter of a deformable focus-control mirror. Imaging results show a significant improvement in contrast and image fidelity due to the effective reduction in stray light achieved with the self-aligned black aperture.