Journal of Micro/Nanolithography, MEMS, and MOEMS
VOL. 17 · NO. 4 | October 2018
SPIE publishes accepted journal articles as soon as they are approved for publication Journal issues are considered In Progress until all articles for an issue have been published. Articles published ahead of the completed issue are fully citable.
Special Section on Control of Integrated Circuit Patterning Variance, Part 3: Pattern Roughness, Local Uniformity, and Stochastic Defects
J. Micro/Nanolith. MEMS MOEMS 17(4), 041002 (11 July 2018)
TOPICS: Particles, Lithography, Stochastic processes, Molecules, Failure analysis, Extreme ultraviolet lithography, Photoresist materials, Chemical species, Extreme ultraviolet, Vacuum tubes
J. Micro/Nanolith. MEMS MOEMS 17(4), 041003 (11 July 2018)
TOPICS: Monte Carlo methods, Quantum efficiency, Photons, Stochastic processes, Data modeling, Extreme ultraviolet lithography, Particles, Performance modeling, Absorption, Extreme ultraviolet
J. Micro/Nanolith. MEMS MOEMS 17(4), 041004 (23 July 2018)
TOPICS: Line edge roughness, Scanning electron microscopy, Edge detection, Signal to noise ratio, Detection and tracking algorithms, Critical dimension metrology, Image filtering, Stochastic processes, Metrology, Reliability
J. Micro/Nanolith. MEMS MOEMS 17(4), 041005 (31 July 2018)
TOPICS: Metrology, Line width roughness, Critical dimension metrology, Sensors, X-rays, Scanning electron microscopy, Reflectivity, Scattering, Reliability, Manufacturing
J. Micro/Nanolith. MEMS MOEMS 17(4), 041006 (7 August 2018)
TOPICS: Lithography, Etching, Line edge roughness, Extreme ultraviolet lithography, Scanning electron microscopy, Line width roughness, Image filtering, Critical dimension metrology, Line scan image sensors, Photons
J. Micro/Nanolith. MEMS MOEMS 17(4), 041007 (17 August 2018)
TOPICS: Semiconducting wafers, Scanning electron microscopy, Stochastic processes, Critical dimension metrology, Metrology, Photomasks, Inspection, Optical proximity correction, Electron beam lithography, Etching
J. Micro/Nanolith. MEMS MOEMS 17(4), 041009 (12 September 2018)
TOPICS: Metrology, Line width roughness, Scanning electron microscopy, Digital filtering, Atomic force microscopy, Standards development, Semiconductors, Image acquisition, Image quality, Electron microscopes
J. Micro/Nanolith. MEMS MOEMS 17(4), 041010 (8 September 2018)
TOPICS: Line width roughness, Extreme ultraviolet, Fin field effect transistors, Edge detection, Semiconductors, Metrology, Ion beams, Electron microscopes, Line edge roughness, Transmission electron microscopy
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