Journal of Micro/Nanolithography, MEMS, and MOEMS
VOL. 17 · NO. 4 | October 2018
CONTENTS
Special Section on Control of Integrated Circuit Patterning Variance, Part 3: Pattern Roughness, Local Uniformity, and Stochastic Defects
J. Micro/Nanolith. MEMS MOEMS 17(4), 041001 (23 October 2018) https://doi.org/10.1117/1.JMM.17.4.041001
TOPICS: Amplifiers, Particles, Electrons, Resistance, Electrodes, Thermal effects, Ions, Elementary particles, Ionization, Receivers
J. Micro/Nanolith. MEMS MOEMS 17(4), 041002 (11 July 2018) https://doi.org/10.1117/1.JMM.17.4.041002
TOPICS: Particles, Lithography, Stochastic processes, Molecules, Failure analysis, Extreme ultraviolet lithography, Photoresist materials, Chemical species, Extreme ultraviolet, Vacuum tubes
J. Micro/Nanolith. MEMS MOEMS 17(4), 041003 (11 July 2018) https://doi.org/10.1117/1.JMM.17.4.041003
TOPICS: Monte Carlo methods, Quantum efficiency, Photons, Stochastic processes, Data modeling, Extreme ultraviolet lithography, Particles, Performance modeling, Absorption, Extreme ultraviolet
J. Micro/Nanolith. MEMS MOEMS 17(4), 041004 (23 July 2018) https://doi.org/10.1117/1.JMM.17.4.041004
TOPICS: Line edge roughness, Scanning electron microscopy, Edge detection, Signal to noise ratio, Detection and tracking algorithms, Critical dimension metrology, Image filtering, Stochastic processes, Metrology, Reliability
J. Micro/Nanolith. MEMS MOEMS 17(4), 041005 (31 July 2018) https://doi.org/10.1117/1.JMM.17.4.041005
TOPICS: Metrology, Line width roughness, Critical dimension metrology, Sensors, X-rays, Scanning electron microscopy, Reflectivity, Scattering, Reliability, Manufacturing
J. Micro/Nanolith. MEMS MOEMS 17(4), 041006 (7 August 2018) https://doi.org/10.1117/1.JMM.17.4.041006
TOPICS: Lithography, Etching, Line edge roughness, Extreme ultraviolet lithography, Scanning electron microscopy, Line width roughness, Image filtering, Critical dimension metrology, Line scan image sensors, Photons
J. Micro/Nanolith. MEMS MOEMS 17(4), 041007 (17 August 2018) https://doi.org/10.1117/1.JMM.17.4.041007
TOPICS: Semiconducting wafers, Scanning electron microscopy, Stochastic processes, Critical dimension metrology, Metrology, Photomasks, Inspection, Optical proximity correction, Electron beam lithography, Etching
J. Micro/Nanolith. MEMS MOEMS 17(4), 041008 (24 September 2018) https://doi.org/10.1117/1.JMM.17.4.041008
TOPICS: Critical dimension metrology, Extreme ultraviolet, Optical proximity correction, Semiconducting wafers, Line edge roughness, Stochastic processes, Extreme ultraviolet lithography, Cadmium, Semiconductors, Overlay metrology
J. Micro/Nanolith. MEMS MOEMS 17(4), 041009 (12 September 2018) https://doi.org/10.1117/1.JMM.17.4.041009
TOPICS: Metrology, Line width roughness, Scanning electron microscopy, Digital filtering, Atomic force microscopy, Standards development, Semiconductors, Image acquisition, Image quality, Electron microscopes
J. Micro/Nanolith. MEMS MOEMS 17(4), 041010 (8 September 2018) https://doi.org/10.1117/1.JMM.17.4.041010
TOPICS: Line width roughness, Extreme ultraviolet, Fin field effect transistors, Edge detection, Semiconductors, Metrology, Ion beams, Electron microscopes, Line edge roughness, Transmission electron microscopy
J. Micro/Nanolith. MEMS MOEMS 17(4), 041011 (25 September 2018) https://doi.org/10.1117/1.JMM.17.4.041011
TOPICS: Stochastic processes, Printing, Optical correlators, Nanoimprint lithography, Inspection, Photomasks, Extreme ultraviolet lithography, Semiconducting wafers, Etching, Critical dimension metrology
J. Micro/Nanolith. MEMS MOEMS 17(4), 041012 (17 September 2018) https://doi.org/10.1117/1.JMM.17.4.041012
TOPICS: Line width roughness, Photomasks, Extreme ultraviolet, Semiconducting wafers, Scanning electron microscopy, Stochastic processes, Speckle, Scanners, Extreme ultraviolet lithography, Metrology
J. Micro/Nanolith. MEMS MOEMS 17(4), 041013 (17 September 2018) https://doi.org/10.1117/1.JMM.17.4.041013
TOPICS: Photomasks, Semiconducting wafers, Reticles, Extreme ultraviolet, Stochastic processes, Lithography, Printing, Pellicles, Scanning electron microscopy, Extreme ultraviolet lithography
J. Micro/Nanolith. MEMS MOEMS 17(4), 041014 (13 October 2018) https://doi.org/10.1117/1.JMM.17.4.041014
TOPICS: Line edge roughness, Scanning electron microscopy, Fractal analysis, Metrology, Edge roughness, Etching, Lithography, Image processing, Optical lithography, Image segmentation
J. Micro/Nanolith. MEMS MOEMS 17(4), 041015 (4 October 2018) https://doi.org/10.1117/1.JMM.17.4.041015
TOPICS: Stochastic processes, Quenching (fluorescence), Line width roughness, Diffusion, Quantum efficiency, Extreme ultraviolet, Optical lithography, Chemically amplified resists, Statistical modeling, Photoresist materials
J. Micro/Nanolith. MEMS MOEMS 17(4), 041016 (10 November 2018) https://doi.org/10.1117/1.JMM.17.4.041016
TOPICS: Scanning electron microscopy, Line edge roughness, Materials processing, Extreme ultraviolet, Line width roughness, Etching, Lithography, Image filtering, Material characterization, Image acquisition
Lithography
J. Micro/Nanolith. MEMS MOEMS 17(4), 043501 (13 October 2018) https://doi.org/10.1117/1.JMM.17.4.043501
TOPICS: Statistical modeling, Process modeling, Data modeling, Lithography, Photomasks, Image processing, Calibration, Performance modeling, Error analysis, Principal component analysis
J. Micro/Nanolith. MEMS MOEMS 17(4), 043502 (9 November 2018) https://doi.org/10.1117/1.JMM.17.4.043502
TOPICS: Zone plates, Electron beam lithography, Polymethylmethacrylate, X-ray optics, Gold, Scanning electron microscopy, Lithography, Inspection, Diffraction, Monte Carlo methods
J. Micro/Nanolith. MEMS MOEMS 17(4), 043503 (10 November 2018) https://doi.org/10.1117/1.JMM.17.4.043503
TOPICS: Polymers, Photoresist materials, Packaging, Polymer thin films, Temperature metrology, Reliability, Optical lithography, Solids, Scanning electron microscopy, Picture Archiving and Communication System
Metrology
J. Micro/Nanolith. MEMS MOEMS 17(4), 044001 (19 October 2018) https://doi.org/10.1117/1.JMM.17.4.044001
TOPICS: Calibration, Atomic force microscopy, Metrology, Standards development, Critical dimension metrology, Carbon, Silicon, Silicon carbide, Image analysis, Thermal weapon sites
J. Micro/Nanolith. MEMS MOEMS 17(4), 044002 (3 November 2018) https://doi.org/10.1117/1.JMM.17.4.044002
TOPICS: Scattering, Nanostructures, X-rays, Silicon, Semiconductors, System on a chip, Time metrology, Laser scattering, Visualization, Computer simulations
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