Line edge roughness (LER) and linewidth roughness (LWR) of a semiconductor device are important measures for evaluating its performance. Conventionally, LER and LWR have been evaluated from critical dimension scanning electron microscope (CD-SEM) images. However, the problem with CD-SEM measurement is that the high-frequency image noise is large, and the resolution is not sufficiently high. In order to overcome the problem of image noise in CD-SEM measurement, some techniques have been proposed. In these methods, it is necessary to set the parameters for the model and processing, and it is required to verify the correctness of these parameters using reference metrology. We have already proposed a reference metrology using the focused ion beam process and planar transmission electron microscope (planar-TEM) method. In this study, we apply the proposed method to three new samples, namely self-aligned quadruple patterning fin-shaped field-effect transistor device, extreme ultraviolet lithography (EUV) conventional resist, and EUV new material resist. The LWR and the power spectral density (PSD) of LWR are calculated from the edge positions on planar-TEM images. We confirm that the LWR and the PSD of LWR can be measured with high accuracy and evaluate the difference between PSD by the proposed method and that by CD-SEM images. Furthermore, from comparisons with the PSD of the same sample obtained using CD-SEM, the validity of measurement of PSD and LWR by CD-SEM is verified.