Application of polysilazane to etch mask in pattern transfer processes for deep and vacuum ultraviolet lithography

Yasuhiko Sato; Junko Abe

doi:10.1117/1.2198841

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1 April 2006 Application of polysilazane to etch mask in pattern transfer processes for deep and vacuum ultraviolet lithography

Yasuhiko Sato, Junko Abe

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J. of Micro/Nanolithography, MEMS, and MOEMS, 5(2), 023007 (2006). https://doi.org/10.1117/1.2198841

Abstract

A polysilazane is investigated for a spin-on glass (SOG) used for a middle layer in a trilevel resist system. Higher film density is required for the middle layer to obtain higher etch resistance during the underlayer etching. The compositions of the polysilazane baked at 200°C and 300°C are Si_0.42O_0.34C_0.40N_0.20 and Si_0.29O_0.65C_0.10N_0.05, respectively, which are determined by x-ray photoelectron spectroscopy. The polysilazane is converted to silicon-oxide-like compositions by baking at 300°C. The film density and etch rate of SOG made from polysilazane are compared with that of polysiloxsane on condition that both films are baked at 300°C. The film density of the SOG made from the polysilazane is 2.07 g/cm³, which is higher than 1.87 g/cm³ of the conventional SOG made from a polysiloxsan. The etch resistance of the SOG made from the polysilazane is improved by 90% compared with that of the SOG made from the polysiloxsane due to the increased film density.

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Yasuhiko Sato and Junko Abe "Application of polysilazane to etch mask in pattern transfer processes for deep and vacuum ultraviolet lithography," Journal of Micro/Nanolithography, MEMS, and MOEMS 5(2), 023007 (1 April 2006). https://doi.org/10.1117/1.2198841

Published: 1 April 2006

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