1 October 2007 Impact of photoresist composition and polymer chain length on line edge roughness probed with a stochastic simulator
Alexander Philippou, Thomas Mülders, Eckehard Schoell
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Abstract
The impact of various parameters such as photoacid generator (PAG) concentration, acid diffusion length, and polymer size on the finally obtained line edge roughness (LER) in chemically amplified photoresists are investigated with a stochastic simulator. A new aspect of the simulations is to start with a polymer matrix modeled by molecular dynamics simulation and subsequently simplify the description of the resist composition for mesoscopically simulating the post-exposure bake (PEB) and development steps. The results show that decreasing the molecular weight (MW) of chain-like polymers does not necessarily lead to lower roughness values. Acid-breakable polymers are simulated as well showing that they can lead to improved LER characteristics.
©(2007) Society of Photo-Optical Instrumentation Engineers (SPIE)
Alexander Philippou, Thomas Mülders, and Eckehard Schoell "Impact of photoresist composition and polymer chain length on line edge roughness probed with a stochastic simulator," Journal of Micro/Nanolithography, MEMS, and MOEMS 6(4), 043005 (1 October 2007). https://doi.org/10.1117/1.2817656
Published: 1 October 2007
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CITATIONS
Cited by 15 scholarly publications.
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KEYWORDS
Polymers

Ionization

Line edge roughness

Diffusion

Photoresist materials

Computer simulations

Stochastic processes

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