Ultralow k1 oxide contact hole formation and metal filling using resist contact hole pattern by double line and space formation method

Hiroko Nakamura; Mitsuhiro Omura; Souichi Yamashita; Yasuyuki Taniguchi; Junko Abe; Satoshi Tanaka; Soichi Inoue

doi:10.1117/1.2990735

1 October 2008 Ultralow k₁ oxide contact hole formation and metal filling using resist contact hole pattern by double line and space formation method

Hiroko Nakamura, Mitsuhiro Omura, Souichi Yamashita, Yasuyuki Taniguchi, Junko Abe, Satoshi Tanaka, Soichi Inoue

Author Affiliations +

Journal of Micro/Nanolithography, MEMS, and MOEMS, Vol. 7, Issue 4, 043001 (October 2008). https://doi.org/10.1117/1.2990735

Abstract

It was shown previously that the double line and space formation method (DLFM) is superior to other methods for forming a dense contact hole (C/H) resist pattern by simulation, and a 0.30-k₁ 1:1 C/H resist pattern was formed experimentally. A through process of C/H formation from resist patterning to metal filling is presented. The oxide square C/Hs transferred from the resist pattern formed by the DLFM could be filled with metal, although the transferred C/Hs had square corners in comparison with the conventional C/H resist patterning. On the other hand, the combination of the DLFM and the “pack and cover process” makes it possible to form resist random C/Hs on grids. So, the possibility of forming random C/Hs filled with metal is shown. Moreover, the resolution limit of the DLFM is discussed. The 0.29-k₁ (half pitch 65-nm) and 0.27-k₁ (half pitch 56-nm) 1:1 C/H resist patterns could be formed with optimized dipole illumination. So, random C/Hs with k₁ below 0.30 are expected to be formed.

©(2008) Society of Photo-Optical Instrumentation Engineers (SPIE)

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Hiroko Nakamura, Mitsuhiro Omura, Souichi Yamashita, Yasuyuki Taniguchi, Junko Abe, Satoshi Tanaka, and Soichi Inoue "Ultralow k₁ oxide contact hole formation and metal filling using resist contact hole pattern by double line and space formation method," Journal of Micro/Nanolithography, MEMS, and MOEMS 7(4), 043001 (1 October 2008). https://doi.org/10.1117/1.2990735

Published: 1 October 2008

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