Etching characteristics and mechanism of vanadium dioxide in inductively coupled Cl2/Ar plasma

Tae-Hoon Lee; Alexander M. Efremov; Yong-Hyun Ham; Sun Jin Yun; Nam-Ki Min; Munpyo Hong; Kwang-Ho Kwon

doi:10.1117/1.3100423

1 April 2009 Etching characteristics and mechanism of vanadium dioxide in inductively coupled Cl₂/Ar plasma

Tae-Hoon Lee, Alexander M. Efremov, Yong-Hyun Ham, Sun Jin Yun, Nam-Ki Min, Munpyo Hong, Kwang-Ho Kwon

Journal of Micro/Nanolithography, MEMS, and MOEMS, Vol. 8, Issue 2, 021110 (April 2009). https://doi.org/10.1117/1.3100423

Abstract

An investigation of a VO₂ etch mechanism in Cl₂/Ar inductively coupled plasma under the condition of low ion bombardment energy is carried out. It is found that an increase in Ar mixing ratio results a nonmonotonic VO₂ etch rate, which reaches a maximum of 70 to 80 nm/min at 70 to 75% Ar. The model-based analysis of the etch mechanism shows that the VO₂ etch kinetics correspond to the ion-flux-limited etch regime. This is most likely due to the domination of low volatile VCl₃ and/or VCl₂ in the reaction products.

©(2009) Society of Photo-Optical Instrumentation Engineers (SPIE)

Citation Download Citation

Tae-Hoon Lee, Alexander M. Efremov, Yong-Hyun Ham, Sun Jin Yun, Nam-Ki Min, Munpyo Hong, and Kwang-Ho Kwon "Etching characteristics and mechanism of vanadium dioxide in inductively coupled Cl₂/Ar plasma," Journal of Micro/Nanolithography, MEMS, and MOEMS 8(2), 021110 (1 April 2009). https://doi.org/10.1117/1.3100423

Published: 1 April 2009

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