Extreme ultraviolet interference lithography as applied to photoresist studies

Roel Gronheid; Michael J. Leeson

doi:10.1117/1.3124188

1 April 2009 Extreme ultraviolet interference lithography as applied to photoresist studies

Roel Gronheid, Michael J. Leeson

Journal of Micro/Nanolithography, MEMS, and MOEMS, Vol. 8, Issue 2, 021205 (April 2009). https://doi.org/10.1117/1.3124188

Abstract

Extreme ultraviolet interference lithography (EUV IL), especially in combination with tool-independent metrics for resist performance, is a powerful technique for judging progress with current resists, the potential of new materials and studying the fundamentals of resist performance. We provide an overview of how EUV IL is applied for resist testing and early material selections. Also discussed are examples of EUV IL being used to gain fundamental understanding for resist characterization under EUV imaging conditions.

©(2009) Society of Photo-Optical Instrumentation Engineers (SPIE)

Citation Download Citation

Roel Gronheid and Michael J. Leeson "Extreme ultraviolet interference lithography as applied to photoresist studies," Journal of Micro/Nanolithography, MEMS, and MOEMS 8(2), 021205 (1 April 2009). https://doi.org/10.1117/1.3124188

Published: 1 April 2009

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