1 April 2010 Monte Carlo modeling in the low-energy domain of the secondary electron emission of polymethylmethacrylate for critical-dimension scanning electron microscopy
Maurizio Dapor, Mauro Ciappa, Wolfgang Fichtner
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Abstract
The main scattering mechanisms governing the transport of electrons in PMMA in an energy domain ranging from the energy of the primary electron beam down to few hundreds of meV are identified. A quantitative Monte Carlo model for the emission of secondary electrons is developed to be applied for critical dimensions extraction from high-resolution scanning electron microscopy (SEM) images. Selected results are presented, which demonstrate the accuracy of the proposed approach.
©(2010) Society of Photo-Optical Instrumentation Engineers (SPIE)
Maurizio Dapor, Mauro Ciappa, and Wolfgang Fichtner "Monte Carlo modeling in the low-energy domain of the secondary electron emission of polymethylmethacrylate for critical-dimension scanning electron microscopy," Journal of Micro/Nanolithography, MEMS, and MOEMS 9(2), 023001 (1 April 2010). https://doi.org/10.1117/1.3373517
Published: 1 April 2010
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Cited by 55 scholarly publications.
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KEYWORDS
Monte Carlo methods

Polymethylmethacrylate

Scattering

Molecules

Phonons

Polarons

Scanning electron microscopy

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