Journal of Micro/Nanopatterning, Materials, and Metrology

Editor-in-Chief: Harry Levinson, HJL Lithography, USA

The Journal of Micro/Nanopatterning, Materials, and Metrology (JM3) publishes peer-reviewed papers on the core enabling technologies that address the patterning needs of the electronics industry. Formerly the Journal of Micro/Nanolithography, MEMS, and MOEMS, the journal’s key subject areas include the science, development, and practice of lithographic, computational, etch, and integration technologies. In this context the electronics industry includes but is not limited to integrated circuits and multichip modules, and advanced packaging with features in the submicron regime.

Calls for Papers
How to Submit a Manuscript

Regular papers: Submissions of regular papers are always welcome.

Special section papers: Open calls for papers are listed below. A cover letter indicating that the submission is intended for a particular special section should be included with the paper.

To submit a paper, please prepare the manuscript according to the journal guidelines and use the online submission systemLeaving site. All papers will be peer‐reviewed in accordance with the journal's established policies and procedures. Authors who pay the voluntary page charges will receive the benefit of open access.

EUV Masks
Publication Date
Vol. 20, Issue 4
Submission Deadline
15 March 2021
Guest Editors
Martin Burkhardt

IBM Research
Yorktown Heights, New York, USA
martburk@us.ibm.com

 

Vicky Philipsen

IMEC
Leuven, Belgium
vicky.philipsen@imec.be

Call for papers

After more than a decade in the research and development phase, extreme ultraviolet lithography (EUVL) is finally being used for manufacturing in the semiconductor industry.

To guarantee superior EUVL performance for current and future technology nodes, the mask community continues to further improve the photomask itself. The current state-of-the-art tantalum-based absorber has been a good starting point for early manufacturing but has also been shown to yield non-optimal imaging performance. For this reason, mask technology is still a very active area of research, where the mask materials and concepts are being challenged, engineered, examined, and matured to support next-generation lithography.

Both theoretical and experimental papers advancing the state of the art in simulation, material selection, blank and mask manufacturing, repair, inspection, and imaging are welcome in all aspects of EUV masks, including but not limited to:

  • Rigorous imaging simulations
  • Source mask optimization
  • Alternative absorber materials
  • Absorber patterning
  • Printing with novel absorber materials
  • Mask inspection and review
  • Mask repair
  • Lifetime and compatibility assessment  

All papers will undergo the standard peer-review process for the Journal of Micro/Nanopatterning, Materials, and Metrology (JM 3). Manuscripts should be submitted to SPIE according to the journal guidelines at http://spie.org/jm3. A cover letter indicating that the submission is intended for this special section should be included. For more information, please contact the guest editors or jm3@spie.org.

Papers are published as soon as they are accepted for publication and final proofs are approved. Early submission is encouraged.

EUV Masks
Masks and Lithography in the Era of Multi-beam Mask Writers
Publication Date
Vol. 20, Issue 4
Submission Deadline
31 March 2021
Guest Editors
Alan Brodie

KLA
San Jose, California, USA
alan.brodie@kla.com

 

Martha Sanchez

LytEn, Inc.
San Jose, California, USA
martha.i.sanchez05@gmail.com

Call for papers

Multi-beam mask writers are no longer a novelty and are now mainstream. This has resulted in improved quality of printed masks, such as lower LER, CD control, and registration. This has also enabled new capabilities, including curvilinear features on the mask. This special section of JM 3 will highlight the new multi-beam mask writers and the capabilities they enable.

Both theoretical and experimental papers advancing the state of the art in simulation, material selection, mask manufacturing, repair, inspection, and imaging are welcome in all aspects of multi-beam mask writers, including but not limited to:

  • Description of multi-beam mask writer technology
  • New features for mask patterning
  • Characteristics of masks made with multi-beam mask writers, such as resolution, LER, CD uniformity, registration, and write-time
  • Rigorous imaging simulations
  • Curvilinear masks and their applications
  • Mask rules check (MRC) and design rules check (DRC) for curvilinear masks
  • Design for curvilinear masks

All papers will undergo the standard peer-review process for the premier volume of the Journal of Micro/Nanopatterning, Materials, and Metrology (JM 3) (successor to the current Journal of Micro/Nanolithography, MEMS, and MOEMS). Manuscripts should be submitted to SPIE according to the journal guidelines at http://spie.org/jm3. A cover letter indicating that the submission is intended for this special section should be included. For more information, please contact the guest editors or jm3@spie.org.

 Curvilinear Mask Wafer
Deep Learning for Lithography and Photomask Applications
Publication Date
Vol. 20, Issue 4
Submission Deadline
30 May 2021
Guest Editor
Leo Pang

D2S Inc.
San Jose, California, USA
leo@design2silicon.com

 

Call for papers

Deep learning (DL) is one of the most exciting fields in artificial intelligence (AI) right now. It’s still early days for this technology, but DL will totally change the lithography and photomask industry, with better modeling and faster computations for automating the optimization of equipment and processes. This secial section of JM3 will highlight deep learning applications in lithography and the photomask industry.

Both algorithm and application papers advancing the state of the art in modeling, simulations, OPC/ILT, mask manufacturing, metrology, and inspection are welcome in all aspects of deep learning. Topics may include but are not limited to:

  • Description of deep learning technologies and algorithms
  • Digital twins and their applications
  • Use of deep learning to create more accurate models (mask 3D model, resist model, NTD model, etc.)
  • Applying deep learning in OPC and ILT
  • Deep learning in geometry grouping and defect classification
  • Deep learning training data generation with simulations and digital twins
  • Deep learning tricks and best practice

All papers will undergo the standard peer-review process for the premier volume of the Journal of Micro/Nanopatterning, Materials, and Metrology (JM3). Manuscripts should be submitted to SPIE according to the journal guidelines at http://spie.org/jm3. A cover letter indicating that the submission is intended for this special section should be included. For more information, please contact the guest editors or jm3@spie.org.

 

 
Next Generation Light Source, Materials, and Metrology/Inspection Equipment
Publication Date
Vol. 21, Issue 2
Submission Deadline
Submissions open from 1 July to 30 September 2021.
Guest Editor
Erik R. Hosler

PsiQuantum, LLC
Palo Alto, California, USA
hoslere@gmail.com

Brennan Peterson

SVXR
San Jose, California, USA
brennan.l.peterson@gmail.com

Call for papers

Material diversification, design differentiation, and the demands of continual shrink dominate the semiconductor manufacturing landscape—driving the rapid and exponential growth of lithography source, materials, and metrology/inspection requirements to meet the market demands of both CMOS and emerging markets. Here, in this special section, we look to provide a preliminary review of near- and longer-term light source, materials, and metrology/inspection technologies to ensure successful development and ramp of these fledgling technologies.

Theoretical, experimental, and perspective papers advancing both the technology as well as conversation around novel and emerging techniques that have the potential to radical shape and support semiconductor manufacturing over the next few decades are invited to submit a paper. Topics may include but are not limited to:

  • EUV light source developments for lithography, metrology, and inspection
  • Emerging metrology and inspection techniques and perspectives
  • Novel applications of existing metrology and inspection equipment
  • Lab scale electron, photon (IR to x-ray), and e-beam sources
  • Novel materials characterization methods
  • Advanced characterization methods for next generation CMOS, display technologies, and silicon photonics
  • Perspectives on light source, metrology, and inspection requirements for emerging, differentiating, and derivative markets

All papers will undergo the standard peer-review process for the Journal of Micro/Nanopatterning, Materials, and Metrology (JM 3), formerly the Journal of Micro/Nanolithography, MEMS, and MOEMS. Manuscripts should be submitted to SPIE according to the journal guidelines at http://spie.org/jm3. A cover letter indicating that the submission is intended for this special section should be included. For more information, please contact the guest editors or jm3@spie.org.

 

Next Generation Light Source
Published Special Sections

Control of Integrated Circuit Patterning Variance, Part 4: Placement and Critical Dimension, Edge to Edge Overlay (April-June 2019)
Guest Editor: Alexander Starikov

Challenges and Approaches to EUV-Based Patterning for High-Volume Manufacturing Applications (January-March 2019)
Guest Editors: Sebastian Engelmann, Rich Wise, Roel Gronheid, and Nelson Felix

Control of Integrated Circuit Patterning Variance, Part 3: Pattern Roughness, Local Uniformity, and Stochastic Defects (October-December 2018)
Guest Editors: John C. Robinson, Tim Brunner, Gian Lorusso

Novel Patterning Technologies (July-September 2018)
Guest Editors: Eric Panning and Martha Sanchez

EUV Lithography for the 3-nm Node and Beyond (October-December 2017)
Guest Editors: Vivek Bakshi, Hakaru Mizoguchi, Ted Liang, Andrew Grenville, and Jos Benschop

Alternative Lithographic Technologies V (July-September 2016)
Guest Editors: Chris Bencher and Ricardo Ruiz

Control of Integrated Circuit Patterning Variance, Part 2: Image Placement, Device Overlay, and Critical Dimension (April-June 2016)
Guest Editor: Alexander Starikov

Photomask Manufacturing Technology (April-June 2016)
Guest Editors: Masato Shibuya, Morihisa Hoga, and Kiwamu Takehisa

Extending VLSI and Alternative Technology with Optical and Complementary Lithography (April-June 2016)
Guest Editors: Kafai Lai and Andreas Erdmann

On the Interface of Holography and MEMS (October-December 2015)
Guest Editors: Partha Banerjee, Pierre-Alexandre Blanche, Christophe Moser, and Myung K. Kim

Alternative Lithographic Technologies IV (July-September 2015)
Guest Editors: Douglas J. Resnick, Ricardo Ruiz, and Hans Loeschner

Control of Integrated Circuit Patterning Variance Part 1: Metrology, Process Monitoring, and Control of Critical Dimension (April-June 2015)
Guest Editors: Alexander Starikov and Matthew Sendelbach

Continuation of Scaling with Optical and Complementary Lithography (January-March 2015)
Guest Editors: Kafai Lai and Andreas Erdmann

Holistic/Hybrid Metrology (October-December 2014)
Guest Editors: Alok Vaid and Eric Solecky

Alternative Lithographic Technologies III (July-September 2014)
Guest Editors: Douglas J. Resnick, Christopher Bencher, and Ricardo Ruiz

Metrology and Inspection for 3-D Integrated Circuits and Interconnects (January-March 2014)
Guest Editors: Yi-sha Ku and Alexander Starikov

Emerging MOEMS Technology and Applications (January-March 2014)
Guest Editors: M. Edward Motamedi, Joel Kubby, Patrick Ian Oden, and Wibool Piyawattanametha

Optical Lithography Extension Beyond the 14-nm Node (January-March 2014)
Guest Editors: Will Conley and Kafai Lai

Advanced Fabrication of MEMS and Photonic Devices (October-December 2013)
Guest Editors: Georg von Freymann, Mary Ann Maher, and Thomas J. Suleski

Advanced Plasma-Etch Technology (October-December 2013)
Guest Editors: Ying Zhang, Qinghuang Lin, and Gottlieb S. Oehrlein

Alternative Lithographic Technologies (July-September 2013)
Guest Editors: Will Tong and Douglas J. Resnick

Photomasks for EUV Lithography (April-June 2013)
Guest Editors: Christopher J. Progler and Frank E. Abboud

Alternative Lithographic Technologies (July-September 2012)
Guest Editors: William M. Tong, Douglas J. Resnick, and Benjamin Rathsack

Directed Self-Assembly (July-September 2012)
Guest Editors: Daniel P. Sanders and William H. Arnold

Reliability, Packaging, Testing, and Characterization of MEMS and MOEMS III (April-June 2012)
Guest Editors: Sonia M. García-Blanco and Rajeshuni Ramesham

EUV Sources for Lithography (April-June 2012)
Guest Editors: Vivek Bakshi and Anthony Yen

Dimensional Metrology with Atomic Force Microscopy: Instruments and Applications (January-March 2012)
Guest Editors: Ronald Dixson and Ndubuisi G. Orji

Theory and Practice of MEMS, NEMS, and MOEMS (January-March 2011)
Guest Editor: Yu-Cheng Lin

Reliability, Packaging, Testing, and Characterization of MEMS and MOEMS II (October-December 2010)
Guest Editor: Rajeshuni Ramesham

Line-Edge Roughness (October-December 2010 )
Guest Editors: Chris A. Mack and Will Conley

Metrology (October-December 2010 )
Guest Editors: Moshe Preil and Shaunee Cheng

BioMEMS, Theory and Practice of MEMS/NEMS, and Sensors (July-September 2010)
Guest Editor: Yu-Cheng Lin

Extreme-Ultraviolet Lithography (October-December 2009)
Guest Editors: Kevin Cummings and Kazuaki Suzuki

Reliability, Packaging, Testing, and Characterization of MEMS and MOEMS (July-September 2009)
Guest Editors: Rajeshuni Ramesham and Allyson L. Hartzell

Computational Lithography (July-September 2009)
Guest Editors: Donis Flagello and Chris Mack

Theory and Practice of MEMS/NEMS/MOEMS, RF MEMS, and BioMEMS (April-June 2009)
Guest Editor: Yu-Cheng Lin

Extreme-Ultraviolet Interference Lithography (April-June 2009)
Guest Editor: Franco Cerrina

Double-Patterning Lithography (January-March 2009)
Guest Editor: William H. Arnold

Silicon-Based MOEMS and Their Applications (April-June 2008)
Guest Editors: Harald Schenk and Wibool Piyawattanametha

Resolution Enhancement Techniques and Design for Manufacturability (July-September 2007)
Guest Editor: Alfred K. K. Wong

Bio-MEMS and Microfluidics (April-June 2006)
Guest Editors: Wanjun Wang and Ian Papautsky

Nanopatterning (January-March 2006)
Guest Editors: Kees Eijkel, Jill Hruby, Glen Kubiak, M. Scott, Volker Saile, and Steven Walsh

MOEMS Design, Technology, and Applications (October-December 2005)
Guest Editor: M. Edward Motamedi

Polarization and Hyper-NA Lithography (July-September 2005)
Guest Editor: Donis Flagello and Christopher J. Progler

Next Generation Lithography (January-March 2005)
Guest Editor: Walt Trybula

Mask Technology for Optical Lithography (April-June 2004)
Guest Editor: Kevin D. Cummings and Frank M. Schellenberg

Immersion Lithography (January-March 2004)
Guest Editor: William H. Arnold

Surface Micromachining (October-December 2003)
Guest Editors: Jeffry J. Sniegowski and James H. Smith

Micro-Optics for Photonic Networks (October-December 2003)
Guest Editor: Thomas J. Suleski

Lithography for Sub-100-nm Device Fabrication (October-December 2002)
Guest Editor: William H. Arnold

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