Control of optical nanometer gap shapes made via standard lithography using atomic layer deposition

Jiyeah Rhie; Dukhyung Lee; Young-Mi Bahk; Jeeyoon Jeong; Geunchang Choi; Youjin Lee; Sunghwan Kim; Seunghun Hong; Dai-Sik Kim

doi:10.1117/1.JMM.17.2.023504

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3 May 2018 Control of optical nanometer gap shapes made via standard lithography using atomic layer deposition

Jiyeah Rhie, Dukhyung Lee, Young-Mi Bahk, Jeeyoon Jeong, Geunchang Choi, Youjin Lee, Sunghwan Kim, Seunghun Hong, Dai-Sik Kim

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J. of Micro/Nanolithography, MEMS, and MOEMS, 17(2), 023504 (2018). https://doi.org/10.1117/1.JMM.17.2.023504

Abstract

Atomic layer deposition is an efficient method for coating a few nanometer-thick alumina over a wafer scale. This method combined with the standard photolithography process was presented to fabricate metallic nanometer gaps that optically act in terahertz regimes. However, the cross-sectional view of the gap shape of the metal–insulator–metal nanogap structure varies depending on the conditions from the stepwise procedure. In specific, selecting photoresist materials, adding ion milling and chemical etching processes, and varying metal thicknesses and substrates result in various optical gap widths and shapes. Since the cross-sectional gap shape affects the field enhancement of the funneled electromagnetic waves via the nanogap, the control of tailoring the gap shape is necessary. Thus, we present five different versions of fabricating quadrangle-ring-shaped nanometer gap arrays with varying different kinds of outcomes. We foresee the usage of the suggested category for specific applications.

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Jiyeah Rhie, Dukhyung Lee, Young-Mi Bahk, Jeeyoon Jeong, Geunchang Choi, Youjin Lee, Sunghwan Kim, Seunghun Hong, and Dai-Sik Kim "Control of optical nanometer gap shapes made via standard lithography using atomic layer deposition," Journal of Micro/Nanolithography, MEMS, and MOEMS 17(2), 023504 (3 May 2018). https://doi.org/10.1117/1.JMM.17.2.023504

Received: 16 August 2017; Accepted: 29 March 2018; Published: 3 May 2018

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