Background: Non-chemically amplified resist (n-CAR) shows great potential as a unique lithographic material because it avoids some disadvantages of CAR, such as post-exposure instability and acid diffusion. Furthermore, since toxic and flammable developers are widely used in semiconductor manufacturing, the implementation of innovative environmentally friendly water-developable photoresists is of interest.

Aim: A unique n-CAR, which could be developed with an environmentally friendly developer, was prepared for electron beam (e-beam) lithography (EBL) and extreme ultraviolet lithography (EUVL).

Approach: A polymer containing radiation/photosensitive sulfonium triflate group (PSSF) was synthesized and characterized by infrared, H1 NMR, and gel permeation chromatography. The lithography performance of the PSSF photoresist was evaluated by EBL and EUVL. The patterns were analyzed with scanning electron microscope and atomic force microscope.

Results: The PSSF photoresist can be used in EBL and EUVL. Post-exposure bake had no significant effect on the resolution of photoresist. Development in water should be kept at an appropriate time of 30 s to obtain the repeatable and high-resolution patterns. It shows a similar sensitivity to polymethyl methacrylate but higher contrast.

Conclusions: The PSSF acts as n-CAR, and 20 nm line patterns and 35 nm 1:1 line/space patterns were achieved in EBL and EUVL, respectively. It can be developed in pure water with high contrast (γ  =  5.49).