Open Access
5 August 2024 Spectral reflectometry characterization of an extreme ultraviolet attenuated phase-shifting mask blank (Erratum)
Tao Shen, Iacopo Mochi, Dongmin Jeong, Elisabeth Mueller, Paolo Ansuinelli, Jinho Ahn, Yasin Ekinci
Author Affiliations +
Abstract

Erratum corrects errors in STEM measurements in Table 1.

This article [J. Micro/Nanopattern. Mater. Metrol., 23(4), 041402 (2024) https://doi.org/10.1117/1.JMM.23.4.041402] was originally published online on 12 July 2024 with errors in Table 1 and in the Materials and Methods section. STEM measurements in the table and their corresponding mentions in the text were incorrect. The original table is shown below:

Table 1

Sample layer thickness summary.

LayerDesign (nm)STEM (nm)REGINE (nm)
Absorber3337.53±0.2537.7(6)
Ru2.52.48±0.372.1(2)
Ru2Si3N/A1.53±0.381.5(1)
Si4.21.86±0.04N/A
MoSi2N/A1.69±0.04N/A
Mo2.81.94±0.04N/A
MoSi2N/A1.80±0.04N/A

The corrected table appears below:

Table 1

Sample layer thickness summary.

LayerDesign (nm)STEM (nm)REGINE (nm)
Absorber3337.53±0.2537.7(6)
Ru2.52.48±0.372.1(2)
Ru2Si3N/A1.53±0.381.5(1)
Si4.21.86±0.30N/A
MoSi2N/A1.69±0.30N/A
Mo2.81.94±0.28N/A
MoSi2N/A1.80±0.29N/A

The affected portion of the text in Sec. 2.1 has been corrected to read:

“We estimated the thicknesses of Si, Mo, MoSi2 (grown on top of Si), MoSi2 (grown on top of Mo) as 1.86 ± 0.30, 1.94 ± 0.28, 1.80 ± 0.29, and 1.69 ± 0.30 nm, respectively.”

The article was corrected on 25 July 2024.

© 2024 Society of Photo-Optical Instrumentation Engineers (SPIE)
Tao Shen, Iacopo Mochi, Dongmin Jeong, Elisabeth Mueller, Paolo Ansuinelli, Jinho Ahn, and Yasin Ekinci "Spectral reflectometry characterization of an extreme ultraviolet attenuated phase-shifting mask blank (Erratum)," Journal of Micro/Nanopatterning, Materials, and Metrology 23(4), 049801 (5 August 2024). https://doi.org/10.1117/1.JMM.23.4.049801
Published: 5 August 2024
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KEYWORDS
Silicon

Attenuation

Extreme ultraviolet

Molybdenum

Phase shifts

Reflectometry

Ruthenium

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