Tae-Hoon Lee,1 Alexander M. Efremov,2 Yong-Hyun Ham,1 Sun Jin Yun,3 Nam-Ki Min,1 Munpyo Hong,1 Kwang-Ho Kwon1
1Korea Univ. (Korea, Republic of) 2Ivanovo State Univ. of Chemistry and Technology (Russian Federation) 3Electronics and Telecommunications Research Institute (Korea, Republic of)
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
An investigation of a VO2 etch mechanism in Cl2/Ar inductively coupled plasma under the condition of low ion bombardment energy is carried out. It is found that an increase in Ar mixing ratio results a nonmonotonic VO2 etch rate, which reaches a maximum of 70 to 80 nm/min at 70 to 75% Ar. The model-based analysis of the etch mechanism shows that the VO2 etch kinetics correspond to the ion-flux-limited etch regime. This is most likely due to the domination of low volatile VCl3 and/or VCl2 in the reaction products.
Tae-Hoon Lee,Alexander M. Efremov,Yong-Hyun Ham,Sun Jin Yun,Nam-Ki Min,Munpyo Hong, andKwang-Ho Kwon
"Etching characteristics and mechanism of vanadium dioxide in inductively coupled Cl2/Ar plasma," Journal of Micro/Nanolithography, MEMS, and MOEMS 8(2), 021110 (1 April 2009). https://doi.org/10.1117/1.3100423
Published: 1 April 2009
ACCESS THE FULL ARTICLE
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
The alert did not successfully save. Please try again later.
Tae-Hoon Lee, Alexander M. Efremov, Yong-Hyun Ham, Sun Jin Yun, Nam-Ki Min, Munpyo Hong, Kwang-Ho Kwon, "Etching characteristics and mechanism of vanadium dioxide in inductively coupled Cl2/Ar plasma," J. Micro/Nanolith. MEMS MOEMS 8(2) 021110 (1 April 2009) https://doi.org/10.1117/1.3100423