Journal of Micro/Nanopatterning, Materials, and Metrology

Editor-in-Chief: Harry Levinson, HJL Lithography, USA

The Journal of Micro/Nanopatterning, Materials, and Metrology (JM3) publishes peer-reviewed papers on the core enabling technologies that address the patterning needs of the electronics industry. Formerly the Journal of Micro/Nanolithography, MEMS, and MOEMS, the journal’s key subject areas include the science, development, and practice of lithographic, computational, etch, and integration technologies. In this context the electronics industry includes but is not limited to integrated circuits and multichip modules, and advanced packaging with features in the submicron regime.

On the cover: The figure is from the paper "Three-dimensional modeling of EUV photoresist using the multivariate Poisson propagation model" by L. Long, A. Neureuther, and P. Naulleau in Vol. 20, Issue 3.

Featured Content

Special Section on Deep Learning for Lithography and Photomask Applications

Leo Pang

Special Series on EUV Masks

Guest Editors: Martin Burkhardt and Vicky Philipsen

Mask defect detection with hybrid deep learning network

Peter Evanschitzky et al.

Previously Published Special Sections

from the Journal of Micro/Nanopatterning, Materials, and Metrology

EUV Masks (three-part series, October-December 2020, April-June 2021, July-September 2021)

Guest Editors: Martin Burkhardt and Vicky Philipsen

Control of Integrated Circuit Patterning Variance, Part 4: Placement and Critical Dimension, Edge to Edge Overlay (April-June 2019)

Guest Editor: Alexander Starikov

Challenges and Approaches to EUV-Based Patterning for High-Volume Manufacturing Applications (January-March 2019)

Guest Editors: Sebastian Engelmann, Rich Wise, Roel Gronheid, and Nelson Felix

Control of Integrated Circuit Patterning Variance, Part 3: Pattern Roughness, Local Uniformity, and Stochastic Defects (October-December 2018)

Guest Editors: John C. Robinson, Tim Brunner, Gian Lorusso

Novel Patterning Technologies (July-September 2018)

Guest Editors: Eric Panning and Martha Sanchez

EUV Lithography for the 3-nm Node and Beyond (October-December 2017)

Guest Editors: Vivek Bakshi, Hakaru Mizoguchi, Ted Liang, Andrew Grenville, and Jos Benschop

Alternative Lithographic Technologies V (July-September 2016)

Guest Editors: Chris Bencher and Ricardo Ruiz

Control of Integrated Circuit Patterning Variance, Part 2: Image Placement, Device Overlay, and Critical Dimension (April-June 2016)

Guest Editor: Alexander Starikov

Photomask Manufacturing Technology (April-June 2016)

Guest Editors: Masato Shibuya, Morihisa Hoga, and Kiwamu Takehisa

Extending VLSI and Alternative Technology with Optical and Complementary Lithography (April-June 2016)

Guest Editors: Kafai Lai and Andreas Erdmann

Journal Metrics:
ISSN: 1932-5150
E-ISSN: 2708-8340 
CiteScoreTM 2019:  3.0
Impact Factor*: 1.22
5-Year Impact Factor*: 0.968
h5-index: 20
*Source: Journal Impact FactorTM, from Clarivate, 2021

Author Benefits:

  • Rigorous and prompt peer review
  • Rapid, e-first publication of articles
  • Professional copyediting and typesetting
  • Free online color figures
  • Free inclusion of videos and multimedia 
  • Open access publication option at a low cost
  • 5 free downloads from the SPIE Digital Library for authors
  • Integration with Code Ocean, a cloud-based code development and publishing platform


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