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The canonical boundary-value problem for Dyakonov-surface-wave propagation in a fixed direction guided by the planar interface of a uniaxial dielectric material and an isotropic nondissipative dielectric material was solved. Both partnering materials were taken to be homogeneous and the constitutive parameters for both to lie within the ranges of available materials. Solutions were found for which the phase speed of the Dyakonov surface wave is greater than the phase speed of a plane wave in the bulk isotropic partnering material.
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In the current study, the linear combination operator (LCO) and Lee–Low–Pines unitary transformation (LLPUT) are adopted to verify the effect of the anisotropic parabolic potential (APP) on the polaron’s properties in the asymmetric Gaussian quantum well (AGQW). Relations of the vibrational frequency (VF) and the ground state energy (GSE) of weak coupling polaron in the AGQW for GaAs crystal varying with the effective confinement strengths of the APP, the barrier height, and range of the asymmetric Gaussian confinement potential (AGCP) are derived. The numerical calculated results illustrate that the GSE and VF of the weak coupling polaron in the AGQW can increase according to the effective confinement strengths’ growth for given values of the barrier height and range of the AGCP. They will increase by increasing the barrier height of the AGCP. However, they are decreasing functions of the range of the AGCP for the determined values of the effective confinement strengths and the barrier height of the AGCP.
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The enhanced Fabry–Perot (F–P) resonance caused by adding a layer of AlN film to different metal substrates (AlN/metals) was analyzed by controlling the thickness of AlN film. The obtained results using the finite-difference time-domain (FDTD) method show that the absorption capacity of visible light was changed by the film interference effect. Then, the light absorption of Au/AlN/Fe (AAF) trilayer structures exhibits that the addition of the ultra-thin Au layer to the AlN/Fe surface improves the light absorption, the color gamut, and purity. Both the transfer-matrix theory and Fresnel–Airy equation were used to compare the FDTD simulations, the calculations show that all the results are consistent. Systematic analyses revealed that AlN film as an F–P resonant cavity is a promising strategy for optical applications, and AAF is an ideal structure in the applications to optical filters, no-ink printing, and optical anti-counterfeiting.
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We numerically analyzed the influence of geometric structures of gradient Al component AlxGa1 − xN nanowire on their light-trapping properties, ranging from nanopillars, inverted conical frustums, to inverted hexagonal frustums. COMSOL® Multiphysics package based on the finite element method is used to systematically study the effects of geometric parameters such as base radii (R), pillar height (H), period (P), and angle of incident light on the optical absorption. The simulation results show that compared with the other nanostructure counterparts, the inverted hexagonal frustum can effectively couple photons into the nanoarrays to achieve wide spectrum and effective optical absorption for AlxGa1 − xN nanowire-based UV photocathode. The inverted hexagon frustum with optimum height can obtain an optical absorption above 95% over a wide wavelength of 200 to 380 nm and a broad angle of incident light between 0 deg and 70 deg. All these findings not only show that the gradient Al component AlxGa1 − xN material has a great potential advantage for the UV photocathode, but it also provides an efficient broadband and omni-directional light trappers for the UV photocathode.
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