1 September 2007 Metallized slit-shaped pyramidal Si probe with extremely high resolution for 1.5-Tbit/in2 density near-field optical storage
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Abstract
We have developed a near-field optical probe by introducing the metallized pyramidal structure of a Si probe with a slit-shaped tip for high-density optical storage. Numerical analysis using the finite-difference time-domain method showed that the optical spot generated at the aperture measured 13×30 nm. We fabricated a slit-type Si probe and evaluated the spot size using fluorescence imaging of a single dye molecule. The full-width at half maximum of the signal profiles was 16 nm×26 nm, which corresponds to a data density of 1.5 Tbit/in2. Furthermore, a large extinction coefficient depending on the polarization was confirmed.
Takashi Yatsui, Wataru Nomura, and Motoichi Ohtsu "Metallized slit-shaped pyramidal Si probe with extremely high resolution for 1.5-Tbit/in2 density near-field optical storage," Journal of Nanophotonics 1(1), 011550 (1 September 2007). https://doi.org/10.1117/1.2794357
Published: 1 September 2007
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Cited by 15 scholarly publications.
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KEYWORDS
Silicon

Near field

Near field optics

Polarization

Luminescence

Molecules

Optical storage

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