Structural design and optimization of deep-ultraviolet light-emitting diodes with AlxGa1−xN/AlyGa1−yN/AlxGa1−xN(x > y) p-electron blocking layer

Chunshuang Chu; Kangkai Tian; Mengqian Fang; Yonghui Zhang; Songhan Zhao; Wengang Bi; Zi-Hui Zhang

doi:10.1117/1.JNP.12.043503

11 May 2018 Structural design and optimization of deep-ultraviolet light-emitting diodes with AlxGa1−xN/AlyGa1−yN/AlxGa1−xN(x < y) p-electron blocking layer

Chunshuang Chu, Kangkai Tian, Mengqian Fang, Yonghui Zhang, Songhan Zhao, Wengang Bi, Zi-Hui Zhang

Author Affiliations +

Journal of Nanophotonics, Vol. 12, Issue 4, 043503 (May 2018). https://doi.org/10.1117/1.JNP.12.043503

Abstract

This work reports AlGaN-based deep ultraviolet light-emitting diode (DUV LED) possessing a specifically Al_xGa_{1 − x}N / Al_yGa_{1 − y}N / Al_xGa_{1 − x}N (x > y) structured p-electron blocking layer (p-EBL) to achieve the high external quantum efficiency (EQE). The impact of the p-EBL with Al_yGa_{1 − y}N insertion layer at different positions and with different AlN compositions on the hole and electron injection is systematically investigated. Our results show that, for the DUV LED structure in this work, both electrons and holes can be most efficiently injected into the active region by keeping the Al_yGa_{1 − y}N insertion layer near to the p-region. The AlN composition for the Al_yGa_{1 − y}N insertion layer has also to be optimized for maximizing the carrier injection.

Citation Download Citation

Chunshuang Chu, Kangkai Tian, Mengqian Fang, Yonghui Zhang, Songhan Zhao, Wengang Bi, and Zi-Hui Zhang "Structural design and optimization of deep-ultraviolet light-emitting diodes with AlxGa1−xN/AlyGa1−yN/AlxGa1−xN(x < y) p-electron blocking layer," Journal of Nanophotonics 12(4), 043503 (11 May 2018). https://doi.org/10.1117/1.JNP.12.043503

Received: 25 March 2018; Accepted: 25 April 2018; Published: 11 May 2018

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