Suppression of unintentional carbon incorporation in AlGaN-based near-ultraviolet light-emitting diode grown on Si

Zengcheng Li; Legong Liu; Yingnan Huang; Meixin Feng; Jianxun Liu; Qian Sun; Xiujian Sun; Xiaoning Zhan; Hongwei Gao; Yu Zhou; Huaibing Wang; Hanmin Zhao; Hui Yang

doi:10.1117/1.JNP.12.043507

20 June 2018 Suppression of unintentional carbon incorporation in AlGaN-based near-ultraviolet light-emitting diode grown on Si

Zengcheng Li, Legong Liu, Yingnan Huang, Meixin Feng, Jianxun Liu, Qian Sun, Xiujian Sun, Xiaoning Zhan, Hongwei Gao, Yu Zhou, Huaibing Wang, Hanmin Zhao, Hui Yang

Author Affiliations +

Journal of Nanophotonics, Vol. 12, Issue 4, 043507 (June 2018). https://doi.org/10.1117/1.JNP.12.043507

Abstract

AlGaN-based near-ultraviolet light-emitting diodes (NUV-LEDs) emitting at 370 nm were grown on Si(111) substrates by metal-organic chemical vapor deposition. The effect of growth parameters of Si-doped n-type AlGaN thick layer on the material quality and optical performance was studied. Photoluminescence measurements showed that the near-band-edge emission of n-AlGaN was greatly increased and the yellow luminescence (YL) was substantially reduced, when the n-AlGaN layer was grown at a high temperature, a high chamber pressure, and a low growth rate. It was found that the reduced unintentional carbon incorporation in the n-AlGaN layer under those growth conditions was responsible for the improved optical property. The NUV-LED employing the optimized growth parameters of n-AlGaN showed an enhanced light output power and a suppressed YL emission, as well as a better color purity, as compared with the reference one. The results indicate that performance of NUV-LED can be significantly improved by suppressing unintentional carbon incorporation and the defects-related absorption/re-emission in the n-AlGaN.

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Zengcheng Li, Legong Liu, Yingnan Huang, Meixin Feng, Jianxun Liu, Qian Sun, Xiujian Sun, Xiaoning Zhan, Hongwei Gao, Yu Zhou, Huaibing Wang, Hanmin Zhao, and Hui Yang "Suppression of unintentional carbon incorporation in AlGaN-based near-ultraviolet light-emitting diode grown on Si," Journal of Nanophotonics 12(4), 043507 (20 June 2018). https://doi.org/10.1117/1.JNP.12.043507

Received: 26 March 2018; Accepted: 4 June 2018; Published: 20 June 2018

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