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5 July 2018 Review of nanophotonics approaches using nanostructures and nanofabrication for III-nitrides ultraviolet-photonic devices
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Abstract
Group III-nitride semiconductor materials especially AlGaN are key-emerging candidates for the advancement of ultraviolet (UV) photonic devices. Numerous nanophotonics approaches using nanostructures (e.g., nanowires, nanorods, and quantum dots/disks) and nanofabrication (e.g., substrate patterning, photonic crystals, nanogratings, and surface-plasmons) have been demonstrated to address the material growth challenges and to enhance the device efficiencies of photonic devices operating at UV wavelengths. Here, we review the progress of nanophotonics implementations using nanostructured interfaces and nanofabrication approaches for the group III-nitride semiconductors to realize efficient UV-based photonic devices. The existing challenges of nanophotonics applications are presented. This review aims to provide analysis of state-of-the-art nanophotonic approaches in advancing the UV-photonic devices based on group III-nitride semiconductors.
CC BY: © The Authors. Published by SPIE under a Creative Commons Attribution 4.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.
Mohd Sharizal Alias, Malleswararao Tangi, Jorge A. Holguín-Lerma, Edgars Stegenburgs, Abdullah A. Alatawi, Islam Ashry, Ram Chandra Subedi, Davide Priante, Mohammad Khaled Shakfa, Tien Khee Ng, and Boon S. Ooi "Review of nanophotonics approaches using nanostructures and nanofabrication for III-nitrides ultraviolet-photonic devices," Journal of Nanophotonics 12(4), 043508 (5 July 2018). https://doi.org/10.1117/1.JNP.12.043508
Received: 15 April 2018; Accepted: 4 June 2018; Published: 5 July 2018
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CITATIONS
Cited by 46 scholarly publications.
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KEYWORDS
Gallium nitride

Light emitting diodes

Nanophotonics

Nanostructures

Aluminum

Aluminum nitride

Ultraviolet radiation

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