Open Access
4 May 2022 Design of a four-energy-level vertical external surface-emission laser enabled on the waveguide grating structure
Wenda Cui, Hanchang Huang, Hongyan Wang, Kai Han, Xiaojun Xu
Author Affiliations +
Abstract

Membrane or film gain mediums have attracted great attention for their good thermal performances and light field manipulation properties, which are helpful for the power scaling of a laser. A membrane laser enabled on the waveguide grating structure is proposed and this design is flexible to manipulate optical properties by controlling the photonic density of states. Lasing behavior is theoretically analyzed based on the four-level rate equations. Results show that pump absorption is enhanced by about 35 times, which leads to improved laser efficiency. When the laser mode overlaps the resonant guided mode, the Purcell factor achieves 212, leading to enhanced emission rate, as well as an apparent decrease of relaxation oscillating amplitude and time delay. The present work offers a preliminary design and lasing behavior analysis of the vertical external surface-emission laser enabled on the waveguide grating structure.

1.

Introduction

It is the best time for the HPSSLs high-power solid-state lasers (HPSSLs) in recent decades, especially for the diode-pumped solid-state laser (DPSSL) because of its compact structure and good power-scalable ability. It is also a hard time for HPSSLs, although some laser systems have reached a high output power of several kilowatts,13 they encounter a series of problems caused by the high power density in the gain medium, such as the thermal effects which could damage optical elements and worsen the beam quality. Fiber lasers, waveguide lasers, and thin disc lasers are now becoming the main candidates for HPSSLs. The fiber laser has a larger surface-to-volume ratio (SVR), whose cross-section radius is just several micrometers, so it has a quick waste heat dissipation and a simpler heat-removal system. Although high power fiber laser has better performances in some respects, its power increase has become slower in recent years because of the transverse mode instability and other nonlinear effects.4 The planar waveguide laser (PWL) is another type of high-power solid-state laser, the width of which is usually several millimeters and its thickness is around tens or hundreds of micrometers. The output power of PWL has reached a multi-kilowatt level but the beam quality is not very well because it is not well restrained in one dimension.5

The cross-section radius of the thin disc laser is much larger than the fiber laser while its thickness is just hundreds of micrometers, so its SVR is almost as large as the fiber laser and it has a lower power density. On the other hand, thin disc lasers based on the vertical external surface-emitting architecture are capable of outputting a beam with a large mode area and high beam quality, which is very beneficial to HPSSL. The output power has been achieved 10-kW level,6 however, when it comes down to higher power, its pump architecture and the manufacturing technology become very complicated, and the waste heat dissipation is much harder. The trend of thin-disk lasers is to further compress the thickness to pursue a higher heat dissipation rate. Recently, a membrane laser7 of 0.59  μm thick has been developed; however, the round-trip pump absorption of the membrane is quite low because of its limited thickness.

The blossom of nanophotonics technology provides unique solutions to this problem. Lots of high efficiency and low threshold lasers have been realized based on special nanostructure design.810 The photonic density of states (DOS) is affected by local light field distribution around the nanostructures, which is the key to these miniature light sources. Practically, by shape design of the gain medium or cavity, we can engineer or tailor the optical properties of these lasers. The guided-mode resonance (GMR), which permits field localization at the pump and lasing wavelength simultaneously, is a promising tool.1115 If the GMR is excited in the gain membrane, the absorption and emission properties could be improved artificially. Some simulation works of the membrane laser using GMR structure have been done, in which laser behavior is analyzed based on the rate equations.1618 Recently, a membrane laser based on the transmission GMR effect is proposed, in which two grating layers are used.19 Some experimental works about the membrane laser are also conducted, in which the gain medium is the semiconductor membrane,20 however, the GMR structure is not used so the vertical external surface-emitting cannot be realized.

The neodymium-doped material has been used as the gain medium widely in the high-power regime21,22 and the Nd-doped film has been fabricated on different substrates by various methods.2326 The well-fabricated Nd-doped membrane has presented good optical properties and its intrinsic loss is quite low. Except for the thermal management advantage, the threshold of the Nd-doped membrane is lower meanwhile the optical efficiency is higher due to its four-energy-level system. Taking into account all the above advantages, we proposed a compound dielectric waveguide grating (CDWG) structure with the Nd-doped gain membrane as the waveguide layer. GMR is excited in the structure to enhance the pump absorption meanwhile lasing behavior is adjusted to obtain higher optical efficiency.

We first set up a model and gave optimized design parameters using the rigorous coupled-wave analysis (RCWA) method. In the waveguide layer, the light field was localized, so high absorption and emission enhancement were achieved. Second, we combined wave optical simulation with a four-level-rate-equation model and found laser efficiency improvement as well as a compress of relaxation oscillating. These results are particularly optimistic and will be useful for experimental laser scientists.

2.

Laser Design with Gain Membrane Embedded in CDWG

The laser is designed as presented in Fig. 1(a). The whole CDWG structure is considered as an active reflector, which comprises a substrate and a nanostructure gain membrane. The substrate is used as the heat spreader and soldered on the heat sink with indium. As shown in Fig. 1(a), the parameters of the active reflector are optimized so that the laser mode could be overlapped by the GMR mode and the laser beam is highly reflected. M1 is used as the output coupling mirror and the reflection at laser wavelength is R. As a result, a vertical resonant cavity composed of M1 and the active reflector is built. Furthermore, the incident angle of the pump beam should also be optimized so that GMR mode could be excited at the pump wavelength.

Fig. 1

The laser design with CDWG structure (a) the laser schematic, (b) the basic structure and parameters of the gain membrane, and (c) the four-energy level system of Nd3+ ions.

JNP_16_2_026003_f001.png

Figure 1(b) shows the proposed nanostructure gain membrane. First, an Nd3+-doped layer is deposited on the substrate, then a rectangular grating is etched on it. At last, a cap layer is fabricated on the top to protect the grating and improve the reflection spectrum. The Nd3+ doped film is considered the waveguide layer and its thickness is hw. The depth of the grating section is hg and the cap layer’s thickness is hc. Other physical factors are the grating period Λ and the filling factor f. The refractive indexes are ni=1, nc=ns=1.46, and ng=2.48 (ng is the gain film refractive index, ni is the refractive index of incident area, and ns is the substrate refractive index). As presented in Fig. 1(c), the pump transition rouses between the I49/2 and F45/2 levels while the emission transition is between the F43/2 and I411/2 levels. So M1 is coated with a reflection of 99.9% at 0.808  μm, and the laser beam at 1.064  μm is high reflected by the active reflector with the designed CDWG parameters.

The period structure in the CDWG is served as a Bragg reflector, so the incident plane wave can be diffracted into several orders. When an order with incident angle θi couples to the leaky mode supported by the waveguide layer, a GMR mode would be excited. Physically, 100% switching of optical energy between reflected and transmitted waves occurs with respect to the wavelength and angle of incidence.27 These rapid variations of reflection or transmittance are also called GMR effects.

In the designed structure, when the diffracted pump or lasing beam [transverse magnetic (TM) polarization] overlaps the resonant mode, GMR is excited inside the waveguide layer, consequently, a narrow-width high reflection is obtained.28 Light field is modified by the nanostructure, so lasing behavior would be different from a homogeneous gain medium. The light field E(x,z) is calculated by the RCWA.29 The RCWA method is a semi-analytical method that is frequently employed to solve the light field diffracted by a period structure. For the transverse electric (TE)-polarization light field, the incident normalized electric field is expressed as30

Eq. (1)

Einc,y=exp[jk0n1(sinθx+cosθz)],
where k0=2π/λ0 and λ0 is the wavelength of light in the region I. The normalized solutions in the region I(z<0) and region II(z>d) are

Eq. (2)

EI,y=Einc,y+iRiexp[j(kxixkI,ziz)],

Eq. (3)

EII,y=iTiexp{j[kxixkII,zi(zd)]}.
Ri is the normalized electric-field amplitude of the i’th reflected wave in region I. Ti is the normalized electric-field amplitude of the i’th transmitted wave in region II. d is the grating thickness, kxi is determined from the Floquet condition, which is expressed as

Eq. (4)

kxi=k0[nIsinθi(λ0/Λ)].
kI,zi and kII,zi are denoted as km,zi=k0nm2(kxi/k0)2(m=I,II). The electric and magnetic field in the grating region (0<z<d) is expressed as

Eq. (5)

Egy=iSyi(z)exp(jkxix),

Eq. (6)

Hgx=j(ε0μ0)1/2iUxi(z)exp(jkxix).

Substituting Eqs. (5) and (6) and into Maxwell’s equation and the normalized amplitude of the i’th space-harmonic fields Syi(z) and Uxi(z) satisfy the coupled-wave equations, which are stated as

Eq. (7)

Syiz=k0Uxi,

Eq. (8)

Uxiz=(kxi2k0)Syik0pε(ip)Syp.

The set of the coupled-wave equations can be solved by calculating the eigenvalues.30,31 By matching the tangential electric and magnetic components at z=0 and z=d boundaries, the electromagnetic fields as well as Ri and Ti can be calculated. The diffraction efficiencies are defined as

Eq. (9)

DEri=RiRi*Re(kI,zik0nIcosθ),

Eq. (10)

DEti=TiTi*Re(kII,zik0nIcosθ).

For the TM polarization, the incident magnetic field is normal to the incidence plane, and the reflected and transmitted diffraction fields can also be calculated by solving similar eigenvalue equations. Diffraction efficiencies are defined as

Eq. (11)

DEri=RiRi*Re(kI,zik0nIcosθ),

Eq. (12)

DEti=TiTi*Re(kII,zinII2)/(k0cosθnI).

From the analysis, we can obtain the field distribution in the region I and region II by substituting Ri and Ti into Eqs. (2) and (3), the light field in the grating region can also be obtained by summing up the space harmonic items in Eqs. (5) and (6). Furthermore, by increasing the diffractive orders, high accuracy could be obtained.

On the other hand, a higher absorption could be obtained, which is beneficial for optical efficiency. The absorbance we obtained from the numerical simulation is defined as

Eq. (13)

A=1(iRi+iTi).

The absorption could be calculated by introducing the complex refractive index data into the numerical model. A factor M=A(λ)/[Nionσp(λ)hw] is defined to indicate the enhanced absorption of the gain membrane with nanostructures, in which Nion is the Nd3+ density and σp is its absorption cross-section.

Since the diffraction efficiency of a high order is lower, the grating period would better be smaller than λR/n. λR is the Rayleigh wavelength and n is the average refractive index of the waveguide layer. In Fig. 2(a), as the layer thickness increases, more GMR modes appear and high reflection arms get closer, which means that the resonant free-range gets shorter. As shown in Fig. 2(b), we optimized parameters of the CDWG structure as hw=0.5  μm, hg=0.3  μm, hc=0.02  μm, f=0.5, and Λ=0.69  μm. As each diffractive order couples to a leaky waveguide mode, there are many high reflection “arms” in the figure. Namely, there are many diffracted waves in the same direction exciting the GMR modes. On the other hand, some counterpropagating waves are also excited and enhanced simultaneously because of the perturbation of the grating. The counterpropagating waves interact with each other and result in spectrum splitting, which is also known as the resonance bandgap.32 The dispersion curve is almost flat at the edge of band gaps, so the reflection would keep high at a fixed wavelength as the incident angle changes. That is to say, the angle tolerance is improved, which is beneficial to assemble the laser cavity. As the parameters of the compound structure change, the band gaps will shift so appropriate resonant wavelength for the pump and emission light can be obtained with carefully chosen parameters. In Fig. 2(b), it is apparent that some GMR modes appear when the wavelength λ=808nm and λ=1064nm. According to the laser schematic designed in Fig. 1(a), the laser beam in the cavity oscillates vertically to the active reflector, so the resonant angle is chosen as θi=0deg. Similarly, the resonant angle of the pump beam with the wavelength λ=808nm is larger than 0 deg. Reflection curves in Fig. 3(a) are exacted from Fig. 2(b), and present a high reflection of 99.8% at 1.064  μm when the incident angle θi=0deg, as well as a reflection of 98% at 0.808  μm when the incident angle θi=35.7deg. It can be deduced from Fig. 1(a) that a higher reflection at the wavelength λ=1.064  μm is beneficial for the laser design, which means the cavity loss would be lower.

Fig. 2

Reflection maps with (a) different layer thicknesses and (b) different incident angles.

JNP_16_2_026003_f002.png

Fig. 3

(a) The reflectance spectrum of beams with different incident angles and (b) the absorption enhancement.

JNP_16_2_026003_f003.png

As GMR is excited at the pump wavelength, Fig. 3(b) presents the absorption factor M, which achieves about 35 at 0.808  μm. The absorption enhancement is due to the light field localization in the waveguide layer as shown in Fig. 4(a), as a result, more Nd3+ ions could be pumped to the excited state.

Fig. 4

Light field distribution with (a) λ=808  nm, θ=35.7deg and (b) λ=1064  nm, θ=0  deg.

JNP_16_2_026003_f004.png

Besides the absorption, the confined light field in the CDWG structure also affects the emission enhancement apparently known as the Purcell effect. The Purcell factor F is defined as33

Eq. (14)

F=34π2(QVm)(λn)3.
Q is the quality factor, which could be obtained by Q=λ/Δλ. λ is the laser wavelength, Δλ is the line width, n is the refractive index, and Vm indicates the mode volume defined as

Eq. (15)

Vm=Vε(r)|E(r)|2d3rmax[ε(r)|E(r)|2]
(r) is the permittivity at position r and E(r) is the light amplitude. In Fig. 3(a), the spectral width of the GMR mode at λ=1.064  μm is suppressed apparently. Namely, the photonic density of final states ρ is enhanced. As the DOS ρ=1/(ΔνVm), in which Δν is the line width of the GMR mode, the transition between F43/2 and I411/2 would be enhanced according to Fermi’s gold rule.34 As shown in Fig. 4(b), the light field of λ=1.064  μm is enhanced apparently in the waveguide layer. By introducing refractive index and light amplitude distribution into Eqs. (14) and (15), F=212 is obtained. Lasing behavior affected by the GMR effect is analyzed in detail in the next section.

3.

Lasing Behavior of the Designed Membrane Laser

The Nd3+-doped gain medium is a four-energy-level system as Fig. 1(c) shows. Since the relaxation process between F45/2 and F43/2 is extremely fast, means that the light field localization mainly affects the stimulated absorption process instead of the spontaneous emission between F45/2 and I49/2. On the other hand, the lifetime of F43/2 is about 200  μs, so the emission process is apparently affected by the Purcell effect. As the light and gain material interaction is enhanced by the structure design in the last section, we analyzed the lasing dynamic progress based on the rate equations, which are given as

Eq. (16)

dn4dt=Rpn4τ43,

Eq. (17)

dn3dt=n4τ43n3τ'32Rse,

Eq. (18)

dn2dt=n3τ'32n2τ21+Rse,

Eq. (19)

dn1dt=n2τ21Rp.
ni (i=1,2,3,4) is the ion density of different energy levels, Rp=Ipηabs/hw is the pump rate and   ηabs is the absorption coefficient. In this model, the gain thickness hw is so small that the absorption coefficient could be defined as ηabs=1exp(Mσan0hw). n0 is the doped Nd3+ ion density, M is the absorption enhancement factor, and σa is the absorption cross-section. τ43 and τ21 indicate the lifetime of non-radiative transitions. In the four-energy-level system of Nd3+ ions, the relaxation process τ43 and τ21 are not affected while the lasing process is enhanced by the Purcell effect between the F43/2 to I411/2 transition. The effective lifetime of F43/2 is defined as τ32=τ32/F, which means the spontaneous rate is much higher.

The stimulated emission rate Rse can be expressed by Eq. (20) for the homogeneous broadening, which is given as

Eq. (20)

Rse=Δnv3F4π2τ32ν02Δνϕ,
Δν is the full-width at half-maximum of the Lorentzian spectral line shape function, ν is the group velocity in the dielectric medium and ν0 is the central frequency. Δn=(n3fn2) is the population reversion, and f is the Boltzmann population factor between the F43/2 and I411/2 level, which is about 6.17×107 at room temperature. We assume that only the resonance modes overlapping with the modes of the spontaneous emission relax with a shorter lifetime τ32.  ϕ is the photon density in the cavity and satisfies the Eq. (21), which is

Eq. (21)

dϕdt=Rseϕτr+an3τ32.

The photon density is mainly affected by three factors: the stimulated emission, the photon loss, and the spontaneous emission in the cavity. τr is the photon lifetime that represents the photon loss and can be expressed as τr=2L/[c(δln(R))], δ is the round-trip loss including the medium loss, the diffraction loss, and the mirror absorption. Especially in this model, δ mainly depends on the reflection of the CDWG structure at 1064 nm. L is the effective optical length L=ngl+ng(ll), l is the gain thickness and L is the cavity length. a denotes the ratio of the contribution that the spontaneous emission makes to the laser oscillation.

Since pump absorption is enhanced because of the field localization in the waveguide layer, the stimulated absorption is improved by about 35 times with the pump beam incident at an appropriate angle of 35.7 deg as presented in Fig. 3(b). Parameters used in the paper are listed in Table 1.35,36

Table 1

Parameters used in the four-energy-level calculation.

Relaxation time (F45/2F43/2) τ430.2 ns
Relaxation time (I411/2I49/2) τ210.5 ns
Absorption cross-section (808 nm) σa1.39×1020  cm2
Emission cross-section (1064 nm)3.55×1019  cm2
Reflection of coupling mirror0.43
Round-trip loss0.1
Contribution ratio of the spontaneous emission a0.1

The slope efficiency and the temporal characteristics are shown in Fig. 5. The Purcell factor F and the enhancement factor M are calculated in the last section. The Nd3+ density is n0=1.38×1020  cm3.

Fig. 5

Output power characteristics: (a) output power with M=1, F=1, and M=35, F=212 and (b) temporal output power with M=1, F=1 and M=35, F=212.

JNP_16_2_026003_f005.png

Figure 5(a) shows the relationship between the output power intensity and the pump intensity with different F and M values. For the designed membrane laser with the Purcell factor F=212 and absorption enhancement factor M=35, the pump threshold is lower, and the optical efficiency is much higher than a classic laser based on a homogenous gain medium without nanostructure (M=1 and F=1). As shown in Fig. 4(a), light field enhancement in the gain medium is realized by design, so the stimulated absorption, which is proportional to the light intensity, is greatly enhanced. As a result, more Nd3+ ions are excited to the F43/2 energy level in the gain medium and the inverted population density Δn gets higher. Considering Eqs. (20) and (21), more stimulated emission photons can be obtained while the excited ions transmit to the ground state I411/2. Consequently, a high enough gain coefficient could be enabled by less pump power to achieve laser oscillation and emit higher laser power.

On the other hand, with the pump intensity Ip=1×105  W/cm2, the output lasing process is shown in Fig. 5(b) and the inset figure presents the lasing process with M=1 and F=1. The laser relaxation achieved a steady state at about 580  μs without nanostructure (M=1 and F=1) and about 0.29  μs with the designed nanostructure (M=35 and F=212). A larger M means that a higher pump rate is obtained, which corresponds to a shorter time to achieve a steady-state. Namely, while the laser mode overlaps the resonant mode in the CDWG, the lasing oscillation starts much more quickly than F=1. Further analysis of the impact of the M and F factor is presented in Fig. 6.

Fig. 6

Lasing relaxation amplitude and lifetime with increasing (a) M and (b) F values.

JNP_16_2_026003_f006.png

The black line in Fig. 6(a) shows the changing of the maximum lasing relaxation intensity in the cavity while the absorption enhancement factor M increases from 1 to 50. The F factor is set as a constant of 212 in Fig. 6(a). A higher M means that more pump power is absorbed and Rp gets larger. According to the rate Eqs. (1619), more ions can be pumped to the F43/2 energy level, as a result, the inverted population density Δn gets higher. Considering Eqs. (20) and (21), the stimulated rate Rse gets higher and the photon density in the cavity will increase consequently.

On the other hand, the relaxation lifetime t0, which is defined as the time that the laser relaxation cost to achieve a steady outputting, is dramatically decreased as the red line presents in Fig. 6(a). The relaxation lifetime is about 3μs for M=1, when the M factor equals 5, the lifetime is shortened to about 0.27  μs and changes little with the further increase of the M factor. According to the rate Eqs. (1619), a small M factor means that fewer ions are pumped to the excited state, so the stimulated rate Rse is subsequently much lower. Referring to Eq. (21), a lower Rse means that the spontaneous emission provides more photons than the stimulated emission in the cavity. Since the power increase of stimulated emission is much faster than that of the spontaneous emission, the laser intensity in the cavity will increase slowly and the relaxation lifetime is longer.

The black line in Fig. 6(b) shows the changing of the maximum lasing relaxation intensity in the cavity while the Purcell factor F increases from 1 to 500. The M factor is set as a constant of 35 in Fig. 6(b). According to Eq. (20), the stimulated emission rate Rse will get higher while the Purcell factor increases. As a result, the photon density in the cavity will increase just like the situation in Fig. 6(a). On the other hand, since the effective lifetime of F43/2 is defined as τ32=τ32/F, the spontaneous rate will be much higher with a larger F factor. According to Eq. (21), the stimulated emission and spontaneous emission process get faster simultaneously in the cavity, so the relaxation lifetime decreases dramatically as the red line presents in Fig. 6(b).

4.

Conclusions

A membrane laser is designed based on the CDWG structure, in which the Nd-doped film is used as the gain medium as well as part of the CDWG structure that rouses the light field localization. Proper parameters of the CDWG structure are optimized carefully to achieve high reflection at both the pump and laser wavelength. The pump beam is efficiently absorbed, and the stimulated emission process is accelerated either, which may make sense to realize a high-efficiency and quick response laser. These results mean that nanotechnology could play a great role in solid-state lasers, which will be particularly helpful for high energy laser scientists, and this needs more participation of nano-scientists.

Acknowledgments

We thank Zining Yang (National University of Defense Technology, College of Advanced Interdisciplinary Studies) for the helpful discussions and Maohui Yuan (National University of Defense Technology, Interdisciplinary Center of Quantum Information) for the English editing. The authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper.

Code, Data, and Materials Availability

The data and codes used or analyzed during the current study are available from the corresponding author on reasonable request.

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Biographies of the authors are not available.

CC BY: © The Authors. Published by SPIE under a Creative Commons Attribution 4.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.
Wenda Cui, Hanchang Huang, Hongyan Wang, Kai Han, and Xiaojun Xu "Design of a four-energy-level vertical external surface-emission laser enabled on the waveguide grating structure," Journal of Nanophotonics 16(2), 026003 (4 May 2022). https://doi.org/10.1117/1.JNP.16.026003
Received: 22 December 2021; Accepted: 12 April 2022; Published: 4 May 2022
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KEYWORDS
Absorption

Waveguides

Ions

Neodymium

Laser development

Nanostructures

Optical design

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