Design And Characterization Of A Schottky Infrared Charge Coupled Device (IRCCD) Focal Plane Array

B. R. Capone; R. W. Taylor; W. F. Kosonocky

doi:10.1117/12.7973008

1 October 1982 Design And Characterization Of A Schottky Infrared Charge Coupled Device (IRCCD) Focal Plane Array

B. R. Capone, R. W. Taylor, W. F. Kosonocky

Author Affiliations +

Optical Engineering, Vol. 21, Issue 5, 215945 (October 1982). https://doi.org/10.1117/12.7973008

Abstract

We describe the physics, construction, operational properties, and performance of Schottky mosaic sensors utilizing platinum silicide as the sensing layer. These devices are monolithic and are fabricated with standard integrated circuit grade silicon. Data are presented on quantum yield, transfer characteristic, uniformity and integration ele-ment size. The sensitivity and wide dynamic range of these devices are demonstrated by measurement and imagery. The construction and performance of a second generation, 32 x 64 element, area array is discussed. Several examples of thermal imagery are shown.

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B. R. Capone, R. W. Taylor, and W. F. Kosonocky "Design And Characterization Of A Schottky Infrared Charge Coupled Device (IRCCD) Focal Plane Array," Optical Engineering 21(5), 215945 (1 October 1982). https://doi.org/10.1117/12.7973008

Published: 1 October 1982

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