Translator Disclaimer
1 October 1982 Design And Characterization Of A Schottky Infrared Charge Coupled Device (IRCCD) Focal Plane Array
Author Affiliations +
Abstract
We describe the physics, construction, operational properties, and performance of Schottky mosaic sensors utilizing platinum silicide as the sensing layer. These devices are monolithic and are fabricated with standard integrated circuit grade silicon. Data are presented on quantum yield, transfer characteristic, uniformity and integration ele-ment size. The sensitivity and wide dynamic range of these devices are demonstrated by measurement and imagery. The construction and performance of a second generation, 32 x 64 element, area array is discussed. Several examples of thermal imagery are shown.
B. R. Capone, R. W. Taylor, and W. F. Kosonocky "Design And Characterization Of A Schottky Infrared Charge Coupled Device (IRCCD) Focal Plane Array," Optical Engineering 21(5), 215945 (1 October 1982). https://doi.org/10.1117/12.7973008
Published: 1 October 1982
JOURNAL ARTICLE
6 PAGES


SHARE
Advertisement
Advertisement
RELATED CONTENT

Ir Focal Plane Arrays Application And System Design
Proceedings of SPIE (May 03 1988)
High Density Schottky-Barrier Infrared Image Sensor
Proceedings of SPIE (August 15 1988)
Thermal Imaging Using Indium Doped Silicon
Proceedings of SPIE (November 22 1986)
PtSi Schottky-barrier infrared FPAs with CDS readout
Proceedings of SPIE (June 13 1997)

Back to Top