Masked Ion Beam Lithography For Submicrometer Device Fabrication

C. W. Slayman; J. L. Bartelt; C. M. McKenna; J. Y. Chen

doi:10.1117/12.7973084

1 April 1983 Masked Ion Beam Lithography For Submicrometer Device Fabrication

C. W. Slayman, J. L. Bartelt, C. M. McKenna, J. Y. Chen

Author Affiliations +

Optical Engineering, Vol. 22, Issue 2, 222208 (April 1983). https://doi.org/10.1117/12.7973084

Abstract

Masked ion beam lithography (MIBL) is a high resolution pattern replication technology that uses a collimated proton beam directed through a patterned mask to expose a resist-coated wafer in proximity to the mask. A major step in the demonstration of MIBL as a practical lithography for submicrometer device processing has been achieved with the fabrication of functional n-channel metal oxide semiconductor (NMOS) devices. We present details of the mask fabrication, resist and process technology development, and the resulting NMOS test chip characteristics.

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C. W. Slayman, J. L. Bartelt, C. M. McKenna, and J. Y. Chen "Masked Ion Beam Lithography For Submicrometer Device Fabrication," Optical Engineering 22(2), 222208 (1 April 1983). https://doi.org/10.1117/12.7973084

Published: 1 April 1983

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