800 X 800 Charge-Coupled Device Image Sensor

Morley M. Blouke; James R. Janesick; Joseph E. Hall; Marvin W. Cowens; Patrick J. May

doi:10.1117/12.7973205

1 October 1983 800 X 800 Charge-Coupled Device Image Sensor

Morley M. Blouke, James R. Janesick, Joseph E. Hall, Marvin W. Cowens, Patrick J. May

Author Affiliations +

Optical Engineering, Vol. 22, Issue 5, 225607 (October 1983). https://doi.org/10.1117/12.7973205

Abstract

The design and performance of an 800 X 800 pixel charge-coupled device (CCD) imager are described. This device is fabricated utilizing a three-phase, three-level polysilicon gate process. The chip is thinned to 8 um and is employed in the rear illumination mode. Detailed measurements of the device performance, including dark current as a function of temperature, linearity, and noise, are presented. The device is coated with an ultraviolet (UV) downconverting phosphor which allows imaging with the same device over an extremely wide optical bandwidth.

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Morley M. Blouke, James R. Janesick, Joseph E. Hall, Marvin W. Cowens, and Patrick J. May "800 X 800 Charge-Coupled Device Image Sensor," Optical Engineering 22(5), 225607 (1 October 1983). https://doi.org/10.1117/12.7973205

Published: 1 October 1983

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