Optical Engineering
VOL. 28 · NO. 10 | October 1989
CONTENTS
IN THIS ISSUE

Articles (1)
Journal Articles
Opt. Eng. 28(10), 281023 (1 October 1989) https://doi.org/10.1117/12.7977086
TOPICS: Ultrafast phenomena, Solid state lasers, Solid state physics
Articles
Opt. Eng. 28(10), 281034 (1 October 1989) https://doi.org/10.1117/12.7977087
Journal Articles
Opt. Eng. 28(10), 281034 (1 October 1989) https://doi.org/10.1117/12.7977088
TOPICS: Excitons, Dielectrics, Laser irradiation, Absorption
Opt. Eng. 28(10), 281039 (1 October 1989) https://doi.org/10.1117/12.7977089
TOPICS: Absorption, Laser induced damage, Free electron lasers, Solids, Light emitting diodes, Solid modeling, Laser energy, Photons, Electrons, Laser damage threshold
Opt. Eng. 28(10), 281069 (1 October 1989) https://doi.org/10.1117/12.7977090
TOPICS: Picosecond phenomena, Solids, Crystals, Laser crystals
Opt. Eng. 28(10), 281075 (1 October 1989) https://doi.org/10.1117/12.7977091
TOPICS: Raman scattering, Group IV semiconductors, Picosecond phenomena, Phonons, Semiconductor physics, Physical phenomena, Gallium arsenide, Germanium, Group III-V semiconductors
Opt. Eng. 28(10), 281085 (1 October 1989) https://doi.org/10.1117/12.7977092
TOPICS: Semiconductor lasers, Photoemission spectroscopy, Semiconductors, Electrons, Laser spectroscopy, Pulsed laser operation, Solids, Time resolved spectroscopy, Spectroscopy, Temperature metrology
Opt. Eng. 28(10), 281096 (1 October 1989) https://doi.org/10.1117/12.7977093
TOPICS: Crystals, Silicon, Ultrafast phenomena, Liquids, Carrier dynamics, Amorphous silicon, Picosecond phenomena, Temperature metrology
Opt. Eng. 28(10), 281101 (1 October 1989) https://doi.org/10.1117/12.7977094
TOPICS: Luminescence, Semiconductors, Excitons, Picosecond phenomena, Spectroscopy, Molecules, Molecular interactions, Gallium arsenide
Opt. Eng. 28(10), 281108 (1 October 1989) https://doi.org/10.1117/12.7977095
TOPICS: Liquid crystals, Visible radiation, Infrared radiation, Nonlinear crystals, Nonlinear optics, Infrared lasers, Energy transfer, Refractive index, Continuous wave operation, Pulsed laser operation
Opt. Eng. 28(10), 281114 (1 October 1989) https://doi.org/10.1117/12.7977096
TOPICS: Metals, Electrons, Ultrafast phenomena, Laser damage threshold, Picosecond phenomena
Opt. Eng. 28(10), 281122 (1 October 1989) https://doi.org/10.1117/12.7977097
TOPICS: High power lasers, Visible radiation, Pulsed laser operation, Crystals, Laser crystals, Multiphoton processes, Harmonic generation, Ionization, Ions
Opt. Eng. 28(10), 281133 (1 October 1989) https://doi.org/10.1117/12.7977098
TOPICS: Laser induced damage, Bulk lasers, Laser damage threshold, Polarization, Distortion, Refraction, Quantum electronics, Ionization
Opt. Eng. 28(10), 281145 (1 October 1989) https://doi.org/10.1117/12.7977084
TOPICS: Optical engineering
Opt. Eng. 28(10), 281146 (1 October 1989) https://doi.org/10.1117/12.7977099
TOPICS: Physics
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