1 May 1991 Single-beam and multiple-beam optical limiters using semiconductors
Thomas F. Boggess, Arthur L. Smirl, Jimmy Dubard, A. G. Cui, Rod Skinner
Author Affiliations +
Abstract
We report our investigations of single- and multiple-beam optical limiter configurations using GaAs and Si as the nonlinear optical materials. Three distinct multiple-beam geometries are discussed. One of these, in which two beams interfere within the semiconductor to produce a grating, takes advantage oftransient energy transfer and photorefractive beam coupling to deplete the signal beam. The other two configurations exploit the whole-beam absorptive and refractive index changes induced in the semiconductor by a strong control beam that arrives at the sample before the signal. For one of the latter two configurations, nonlinear absorption and induced defocusing are used to attenuate the signal; in the other, nonlinear absorption and induced deflection are used. We discuss the relative merits of each configuration and compare them to singlebeam results obtained under identical experimental conditions.
Thomas F. Boggess, Arthur L. Smirl, Jimmy Dubard, A. G. Cui, and Rod Skinner "Single-beam and multiple-beam optical limiters using semiconductors," Optical Engineering 30(5), (1 May 1991). https://doi.org/10.1117/12.55847
Published: 1 May 1991
Lens.org Logo
CITATIONS
Cited by 3 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Absorption

Gallium arsenide

Silicon

Nonlinear optics

Energy transfer

Semiconductors

Beam controllers

Back to Top