Optical properties of SiNx deposited by electron cyclotron resonance   plasma-enhanced deposition

Pavel V. Bulkin; Pieter L. Swart; Beatrys M. Lacquet

doi:10.1117/12.175695

1 September 1994 Optical properties of SiN_x deposited by electron cyclotron resonance plasma-enhanced deposition

Pavel V. Bulkin, Pieter L. Swart, Beatrys M. Lacquet

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Optical Engineering, Vol. 33, Issue 9, (September 1994). https://doi.org/10.1117/12.175695

Abstract

The properties of thin SiN_x films deposited by computer-controlled electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECR-PECVD) from a mixture of SiH₄ and N₂ onto sapphire substrates were investigated by optical transmission spectroscopy in the wavelength range 200 to 2600 nm. The wavelength dependencies of the refractive index n, extinction coefficient k, absorption coefficient α, and the optical bandgap E_g of the films were studied. The optical properties of SiN_x, were found to be strongly dependent on the gas flow ratio during deposition. The optical band gap displays a blue shift with increase of nitrogen content in the layer with values ranging from 1.7 to 4.2 eV.

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Pavel V. Bulkin, Pieter L. Swart, and Beatrys M. Lacquet "Optical properties of SiN_x deposited by electron cyclotron resonance plasma-enhanced deposition," Optical Engineering 33(9), (1 September 1994). https://doi.org/10.1117/12.175695

Published: 1 September 1994

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