Investigation of carrier transport processes in semiconductors by the photoacoustic frequency transmission method

Dragan M. Todorovic; P. M. Nikolic

doi:10.1117/1.601215

1 February 1997 Investigation of carrier transport processes in semiconductors by the photoacoustic frequency transmission method

Dragan M. Todorovic, P. M. Nikolic

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Optical Engineering, Vol. 36, Issue 2, (February 1997). https://doi.org/10.1117/1.601215

The development of various methods for the investigation of transport phenomena in solids has attracted much attention. The photoacoustic method is a valuable tool in the study of various processes in semiconductors and electronic devices. Especially for the characterization of thermal and carrier transport processes in semiconductors, the transmission detection configuration is available for many applications. That the photoacoustic frequency transmission technique as a valuable tool in the study of carrier transport processes of the semiconductor is shown. The photoacoustic spectra of wide bandgap semiconductors (Siwafers, Ge and GaAs), narrow bandgap semiconductors (InSb, PtSb2) and thin amorphous semiconductor (GeSe) films are measured as a function of modulation frequency.

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Dragan M. Todorovic and P. M. Nikolic "Investigation of carrier transport processes in semiconductors by the photoacoustic frequency transmission method," Optical Engineering 36(2), (1 February 1997). https://doi.org/10.1117/1.601215

Published: 1 February 1997

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