Threshold characteristics of 1.55 um InGaAs/InGaAsP strain-compensated quantum well lasers with zero net strain

Chunsheng Ma; Lijun Wang; Shiyong Liu

doi:10.1117/1.1346582

1 March 2001 Threshold characteristics of 1.55 um InGaAs/InGaAsP strain-compensated quantum well lasers with zero net strain

Chunsheng Ma, Lijun Wang, Shiyong Liu

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Optical Engineering, Vol. 40, Issue 3, (March 2001). https://doi.org/10.1117/1.1346582

Investigations are performed for threshold characteristics of 1.55 ?m InGaAs/InGaAsP strain-compensated quantum well lasers with zero net strain. The computed results show that certain relations exist among the well width, cavity length, intrinsic loss and facet reflectivity for realization of 1.55 ?m wavelength emission. These parameters affect the threshold gain, threshold carrier density and threshold current density. A minimum cavity length exists for a single quantum well laser, near which the threshold carrier density and threshold current density become very large.

©(2001) Society of Photo-Optical Instrumentation Engineers (SPIE)

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Chunsheng Ma, Lijun Wang, and Shiyong Liu "Threshold characteristics of 1.55 um InGaAs/InGaAsP strain-compensated quantum well lasers with zero net strain," Optical Engineering 40(3), (1 March 2001). https://doi.org/10.1117/1.1346582

Published: 1 March 2001

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