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1 October 2001Optical NOR gate based on silicon technology
Alfonso Torres-Jacome,1 Francisco-J. Renero-Carrillo,2 Alicia Vera-Marquina3
1Instituto Nacional de Astrofisica (Mexico) 2Inst. Nacional de Astrofisica Optica Electronica (Mexico) 3Inst Natl Astrofisica Optica/Electronica (Mexico)
An optoelectronic integrated device that carries out digital optical functions is designed in silicon technology. The device achieves the NOR gate, which has input and output optical signals, and is designed to detect and emit a 600-nm-wavelength light. The active detection area is 1 mm2, and it can achieve frequencies of the order of megahertz.
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Alfonso Torres-Jacome, Francisco-J. Renero-Carrillo, Alicia Vera-Marquina, "Optical NOR gate based on silicon technology," Opt. Eng. 40(10) (1 October 2001) https://doi.org/10.1117/1.1403741